검색결과 : 11건
| No. | Article |
|---|---|
| 1 |
Low dislocation density AlGaN epilayers by epitaxial overgrowth of patterned templates Allerman AA, Crawford MH, Lee SR, Clark BG Journal of Crystal Growth, 388, 76, 2014 |
| 2 |
Connection between GaN and InGaN growth mechanisms and surface morphology Koleske DD, Lee SR, Crawford MH, Cross KC, Coltrin ME, Kempisty JM Journal of Crystal Growth, 391, 85, 2014 |
| 3 |
The genetic prehistory of the New World Arctic Raghavan M, DeGiorgio M, Albrechtsen A, Moltke I, Skoglund P, Korneliussen TS, Gronnow B, Appelt M, Gullov HC, Friesen TM, Fitzhugh W, Malmstrom H, Rasmussen S, Olsen J, Melchior L, Fuller BT, Fahrni SM, Stafford T, Grimes V, Renouf MAP, Cybulski J, Lynnerup N, Lahr MM, Britton K, Knecht R, Arneborg J, Metspalu M, Cornejo OE, Malaspinas AS, Wang Y, Rasmussen M, Raghavan V, Hansen TVO, Khusnutdinova E, Pierre T, Dneprovsky K, Andreasen C, Lange H, Hayes MG, Coltrain J, Spitsyn VA, GotherstrOm A, Orlando L, Kivisild T, Villems R, Crawford MH, Nielsen FC, Dissing J, Heinemeier J, Meldgaard M, Bustamante C, O'Rourke DH, Jakobsson M, Gilbert MTP, Nielsen R, Willerslev E Science, 345(6200), 1020, 2014 |
| 4 |
Effect of interface grading and lateral thickness variation on x-ray diffraction by InGaN/GaN multiple quantum wells Lee SR, Koleske DD, Crawford MH, Wierer JJ Journal of Crystal Growth, 355(1), 63, 2012 |
| 5 |
Growth and characterization of Mg-doped AlGaN-AlN short-period superlattices for deep-UV optoelectronic devices Allerman AA, Crawford MH, Miller MA, Lee SR Journal of Crystal Growth, 312(6), 756, 2010 |
| 6 |
Thermal stability of thin InGaN films on GaN Thaler GT, Koleske DD, Lee SR, Bogart KHA, Crawford MH Journal of Crystal Growth, 312(11), 1817, 2010 |
| 7 |
Light-extraction enhancement of GaInN light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact Kim JK, Chhajed S, Schubert MF, Schubert EF, Fischer AJ, Crawford MH, Cho J, Kim H, Sone C Advanced Materials, 20(4), 801, 2008 |
| 8 |
Dislocation reduction in AlGaN grown on patterned GaN Follstaedt DM, Allerman AA, Lee SR, Michael JR, Bogart KHA, Crawford MH, Missert NA Journal of Crystal Growth, 310(4), 766, 2008 |
| 9 |
Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control Creighton JR, Breiland WG, Koleske DD, Thaler G, Crawford MH Journal of Crystal Growth, 310(6), 1062, 2008 |
| 10 |
InGaN/GaN multi-quantum well and LED growth on wafer-bonded sapphire-on-polycrystalline AlN substrates by metalorganic chemical vapor deposition Pinnington T, Koleske DD, Zahler JM, Ladous C, Park YB, Crawford MH, Banas M, Thaler G, Russell MJ, Olson SM, Atwater HA Journal of Crystal Growth, 310(10), 2514, 2008 |