검색결과 : 32건
| No. | Article |
|---|---|
| 1 |
Optimization of SiGe bandgap-based circuits for up to 300 degrees C operation Thomas DB, Najafizadeh L, Cressler JD, Moen KA, Lourenco N Solid-State Electronics, 56(1), 47, 2011 |
| 2 |
Application of advanced 200 GHz Si-Ge HBTs for high dose radiation environments Praveen KC, Pushpa N, Prabakara YP, Govindaraj G, Cressler JD, Prakash APG Solid-State Electronics, 54(12), 1554, 2010 |
| 3 |
Low-frequency noise in buried-channel SiGe n-MODFETs Madan A, Cressler JD, Koester SJ Solid-State Electronics, 53(8), 901, 2009 |
| 4 |
Proton-induced SEU in SiGe digital logic at cryogenic temperatures Sutton AK, Moen K, Cressler JD, Carts MA, Marshall PW, Pellish JA, Ramachandran V, Reed RA, Alles ML, Nju G Solid-State Electronics, 52(10), 1652, 2008 |
| 5 |
Proton and gamma radiation effects in a new first-generation SiGeHBT technology Haugerud BM, Pratapgarhwala MM, Comeau JP, Sutton AK, Prakash APG, Cressler JD, Marshall PW, Marshall CJ, Ladbury RL, El-Diwany M, Mitchell C, Rockett L, Bach T, Lawrence R, Haddad N Solid-State Electronics, 50(2), 181, 2006 |
| 6 |
CMOS reliability issues for emerging cryogenic Lunar electronics applications Chen TB, Zhu CD, Najafizadeh L, Jun B, Ahmed A, Diestelhorst R, Espinel G, Cressler JD Solid-State Electronics, 50(6), 959, 2006 |
| 7 |
Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGeHBTs Liang QQ, Krithivasan R, Ahmed A, Lu Y, Li Y, Cressler JD, Niu GF, Rieh JS, Freeman G, Ahlgren D, Joseph A Solid-State Electronics, 50(6), 964, 2006 |
| 8 |
An investigation of the effects of radiation exposure on stability constraints in epitaxial SiGe strained layers Chen TB, Sutton AK, Haugerud BM, Henderson W, Prakash APG, Cressler JD, Doolittle A, Liu XF, Joseph A, Marshall PW Solid-State Electronics, 50(7-8), 1194, 2006 |
| 9 |
On the geometrical dependence of low-frequency noise in SiGeHBTs Zhao EH, Cressler JD, El-Diwany M, Krakowski TL, Sadovnikov A, Kocoski D Solid-State Electronics, 50(11-12), 1748, 2006 |
| 10 |
Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs Merrett JN, Williams JR, Cressler JD, Sutton A, Cheng L, Bondarenko V, Sankin I, Seale D, Mazzola MS, Krishnan B, Koshka Y, Casady JB Materials Science Forum, 483, 885, 2005 |