검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Quantitative depth profiling of SiOxNy layers on Si van Berkum JGM, Hopstaken MJP, Snijders JHM, Tamminga Y, Cubaynes FN Applied Surface Science, 203, 414, 2003 |
| 2 |
Examination of the Si(111)-SiO2, Si(110)-SiO2, and Si(100)-SiO2 interfacial properties following rapid thermal annealing Hurley PK, O'Sullivan BJ, Cubaynes FN, Stolk PA, Widdershoven FP, Das JH Journal of the Electrochemical Society, 149(3), G194, 2002 |