| 1 |
Current-voltage behaviors of BiFeO3/poly(vinylidene fluoride- trifluoroethylene) composite films
Yu TC, Xu LF, Gui C, Zhu YD, Xiao HB, Wang RL, Yang CP
Thin Solid Films, 676, 120, 2019 |
| 2 |
Diodes of nanocrystalline SiC on n(-)/n(+)-type epitaxial crystalline 6H-SiC
Zheng JD, Wei WS, Zhang CX, He MC, Li C
Applied Surface Science, 435, 265, 2018 |
| 3 |
Accurate modeling of gate tunneling currents in Metal-Insulator-Semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3 and post-metallization annealing
Molina-Reyes J, Uribe-Vargas H, Torres-Torres R, Mani-Gonzalez PG, Herrera-Gomez A
Thin Solid Films, 638, 48, 2017 |
| 4 |
HfO2 gate dielectric on Ge (111) with ultrathin nitride interfacial layer formed by rapid thermal NH3 treatment
Agrawal KS, Patil VS, Khairnar AG, Mahajan AM
Applied Surface Science, 364, 747, 2016 |
| 5 |
Influence of surface near doping concentration on contact formation of silver thick film contacts
Rothhardt P, Meier S, Hoenig R, Wolf A, Biro D
Solar Energy Materials and Solar Cells, 153, 25, 2016 |
| 6 |
Current conduction and steady-state photoconductivity in photodiodes with bismuth titanate interlayer
Yildirim M
Thin Solid Films, 615, 300, 2016 |
| 7 |
Study on reverse-biased gate leakage current mechanisms in Al2O3/InAlAs metal-oxide-semiconductor structures
Jin CJ, Lu HL, Zhang YM, Guan H, Li Z, Zhang YM
Thin Solid Films, 619, 48, 2016 |
| 8 |
Effects of high-k zirconium oxide (ZrO2) interlayer on the electrical and transport properties of Au/n-type InP Schottky diode
Balaram N, Reddy MSP, Reddy VR, Park C
Thin Solid Films, 619, 231, 2016 |
| 9 |
Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films
Kobayashi K, Suzuki A, Ishikawa K
Thin Solid Films, 550, 545, 2014 |
| 10 |
Leakage current conduction behaviors of 0.65 nm equivalent-oxide-thickness HfZrLaO gate dielectrics
Lin KC, Chen JY, Hsu HW, Chen HW, Liu CH
Solid-State Electronics, 77, 7, 2012 |
