검색결과 : 15건
No. | Article |
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1 |
Increase in water evaporation rate with increase in static magnetic field perpendicular to water-air interface Seyfi A, Afzalzadeh R, Hajnorouzi A Chemical Engineering and Processing, 120, 195, 2017 |
2 |
Rapid hydrogenation of amorphous TiO2 to produce efficient H-doped anatase for photocatalytic water splitting Binetti E, El Koura Z, Patel N, Dashora A, Miotello A Applied Catalysis A: General, 500, 69, 2015 |
3 |
Modified NiSi/Si Schottky Barrier Height by Nitrogen Implantation Kalra P, Vora N, Majhi P, Hung PY, Tseng HH, Jammy R, Liu TJK Electrochemical and Solid State Letters, 12(1), H1, 2009 |
4 |
Reaction of a hydrogen-terminated Si(100) surface in UHV with ion-pump generated radicals Zikovsky J, Dogel SA, Dickie AJ, Pitters JL, Wolkow RA Journal of Vacuum Science & Technology A, 27(2), 248, 2009 |
5 |
Water adsorption on fullerene-like carbon nitride overcoats Broitman E, Gueorguiev GK, Furlan A, Son NT, Gellman AJ, Stafstrom S, Hultman L Thin Solid Films, 517(3), 1106, 2008 |
6 |
SiC/SiO2 interface states: Properties and models Afanas'ev VV, Ciobanu F, Dimitrijev S, Pensl G, Stesmans A Materials Science Forum, 483, 563, 2005 |
7 |
Electron spin resonance studies on defects in phosphorus ion-implanted C-60 films Fahim NF, Kojma N, Yamaguchi M, Ohshita Y, Eid AE, Dharmarasu N Solar Energy Materials and Solar Cells, 75(3-4), 411, 2003 |
8 |
Temperature dependence of the structural properties of amorphous silicon oxynitride layers Abu El-Oyoun M, Inokuma T, Kurata Y, Hasegawa S Solid-State Electronics, 47(10), 1669, 2003 |
9 |
A high-resolution photoemission study hydrogen-terminated 6H-SiC surfaces Sieber N, Seyller T, Ley L, Polcik M, James D, Riley JD, Leckey RCG Materials Science Forum, 389-3, 713, 2002 |
10 |
Direct observation of surface dangling bonds during plasma process: chemical reactions during H-2 and Ar plasma treatments Yamasaki S, Das UK, Ishikawa K Thin Solid Films, 407(1-2), 139, 2002 |