검색결과 : 645건
| No. | Article |
|---|---|
| 1 |
Stabilization of sputtered AlN/sapphire templates during high temperature annealing Hagedorn S, Walde S, Mogilatenko A, Weyers M, Cancellara L, Albrecht M, Jaeger D Journal of Crystal Growth, 512, 142, 2019 |
| 2 |
99.992% Si-28 CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits Mazzocchi V, Sennikov PG, Bulanov AD, Churbanov MF, Bertrand B, Hutin L, Barnes JP, Drozdov MN, Hartmann JM, Sanquer M Journal of Crystal Growth, 509, 1, 2019 |
| 3 |
Catalyst-free growth of single crystalline beta-Ga2O3 microbelts on patterned sapphire substrates Feng QJ, Li TT, Li F, Li YZ, Shi B, Gao C, Wang DY, Liang HW Journal of Crystal Growth, 509, 91, 2019 |
| 4 |
A correlation study of substrate and epitaxial wafer with 4H-N type silicon carbide Zhao LX, Wu HW Journal of Crystal Growth, 507, 109, 2019 |
| 5 |
Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers Niu YX, Tang XY, Wu PF, Kong LY, Li Y, Xia JH, Tian HL, Tian L, Tian LX, Zhang WT, Jia RX, Yang F, Wu JM, Pan Y, Zhang YM Journal of Crystal Growth, 507, 143, 2019 |
| 6 |
The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates Yan GG, Liu XF, Shen ZW, Zhao WS, Wang L, Cui YX, Li JT, Zhang F, Sun GS, Zeng YP Journal of Crystal Growth, 507, 175, 2019 |
| 7 |
Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition Liu XF, Yan GG, Shen ZW, Wen ZX, Chen J, He YW, Zhao WS, Wang L, Guan M, Zhang F, Sun GS, Zeng YP Journal of Crystal Growth, 507, 283, 2019 |
| 8 |
Study of a new type nominal "washboard-like" triangular defects in 4H-SiC 4 degrees off-axis (0001) Si-face homoepitaxial layers Hu JC, Jia RX, Niu YX, Zang Y, Pu HB Journal of Crystal Growth, 506, 14, 2019 |
| 9 |
Heteroepitaxial 3C-SiC on Si (100) with flow-modulated carbonization process conditions Li Y, Zhao ZF, Yu L, Wang Y, Yin ZJ, Li ZH, Han P Journal of Crystal Growth, 506, 114, 2019 |
| 10 |
Improvement of fast homoepitaxial growth and defect reduction techniques of thick 4H-SiC epilayers Yan GG, Liu XF, Shen ZW, Wen ZX, Chen J, Zhao WS, Wang L, Zhang F, Zhang XH, Li XG, Sun GS, Zeng YP, Wang ZG Journal of Crystal Growth, 505, 1, 2019 |