화학공학소재연구정보센터
검색결과 : 64건
No. Article
1 Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment
Barzen L, Richter J, Fouckhardt H, Wahl M, Kopnarsk M
Applied Surface Science, 328, 120, 2015
2 Monitoring preparation and phase transitions of carburized W(110) by reflectance difference spectroscopy
Bachmann M, Memmel N, Bertel E, Denk M, Hohage M, Zeppenfeld P
Applied Surface Science, 258(24), 10123, 2012
3 An ultraviolet photoacoustic spectroscopy study of the interaction between Lys49-phospholipase A(2) and amphiphilic molecules
Bugs MR, Bortoleto-Bugs RK, Cornelio ML, Ward RJ
Biochemical and Biophysical Research Communications, 353(4), 889, 2007
4 Surface science studies including low-temperature RDS on MOCVD-prepared, As-terminated Si(100) surfaces
Bork T, McMahon WE, Olson JM, Hannappel T
Journal of Crystal Growth, 298, 54, 2007
5 Si(001) surface optical anisotropies induced by pi-conjugated overlayers and oxidation
Schmidt WG, Hermann A, Fuchs F, Bechstedt F
Current Applied Physics, 6(3), 525, 2006
6 Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diode
Kollonitsch Z, Schimper HJ, Seidel U, Moller K, Neumann S, Tegude FJ, Willig F, Hannappel T
Journal of Crystal Growth, 287(2), 536, 2006
7 Characterization of optical anisotropy in oriented poly(ethylene terephthalate) films using reflectance difference spectroscopy
Schmidegg K, Sun LD, Maier GA, Keckes J, Zeppenfeld P
Polymer, 47(13), 4768, 2006
8 Interface-related in-plane optical anisotropy of quantum wells studied by reflectance-difference spectroscopy
Chen YH, Ye XL, Xu B, Zeng YP, Wang ZG
Materials Science Forum, 475-479, 1777, 2005
9 Surface structure of InGaAs/InP(001) ordered alloy during and after growth
Mori T, Hanada T, Morimura T, Shin K, Makino H, Yao T
Applied Surface Science, 237(1-4), 230, 2004
10 Optical anisotropy and surface morphology of InGaAs lattice-mismatched with GaAS(001)
Morimura T, Mori T, Cho MW, Hanada T, Yao T
Current Applied Physics, 4(6), 621, 2004