검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Cs and Cs-O co-adsorption on Zn-doped GaAs nanowire surfaces: A first-principles calculations Liu L, Diao Y, Xia SH Applied Surface Science, 479, 582, 2019 |
| 2 |
Study of photoexcited plasma in p-doped GaAs beveled structures by micro-Raman spectroscopy Srnanek R, Irmer G, Donoval D, Novotny I, Sciana B, Radziewicz D, Tlaczala M Applied Surface Science, 254(15), 4845, 2008 |
| 3 |
MBE growth, structural, and transport properties of Mn delta-doped GaAs layers Nazmul AM, Sugahara S, Tanaka M Journal of Crystal Growth, 251(1-4), 303, 2003 |
| 4 |
GHz-THz detection by asymmetrically-shaped GaAs: Bulk material versus nanostructures Valusis G, Sachs R, Roskos HG, Suziedelis A, Gradauskas J, Asmontas S, Sirmulis E, Kohler K Materials Science Forum, 384-3, 193, 2002 |
| 5 |
Improvement of nanoscale patterning of heavily doped p-type GaAs by atomic force microscope (AFM)-based surface oxidation process Matsuzaki Y, Yamada A, Konagai M Journal of Crystal Growth, 209(2-3), 509, 2000 |
| 6 |
Synthesis, structure, and molecular orbital studies of yttrium, erbium, and lutetium complexes bearing eta(2)-pyrazolato ligands: Development of a new class of precursors for doping semiconductors Pfeiffer D, Ximba BJ, Liable-Sands LM, Rheingold AL, Heeg MJ, Coleman DM, Sehlegel HB, Kuech TF, Winter CH Inorganic Chemistry, 38(20), 4539, 1999 |
| 7 |
Multiwafer gas source molecular beam epitaxial system for production technology Izumi S, Kouji Y, Hayafuji N Journal of Vacuum Science & Technology B, 17(3), 1011, 1999 |
| 8 |
Effects of stoichiometry and Te concentration on the deep levels in liquid-phase epitaxially grown n-type Al0.3Ga0.7As5 Nishizawa J, Murai A, Oyama Y, Suto K Journal of the Electrochemical Society, 145(8), 2905, 1998 |
| 9 |
GaAs/AlGaAs heterojunction bipolar transistors with a base doping 10(20) cm(-3) grown by solid-source molecular beam epitaxy using CBr4 Micovic M, Nordquist C, Lubyshev D, Mayer TS, Miller DL, Streater RW, SpringThorpe AJ Journal of Vacuum Science & Technology B, 16(3), 972, 1998 |
| 10 |
Substrate orientation dependence of carbon doping of GaAs using CBr4 source in molecular beam epitaxy Schulte DW, Subramanian S, Ungier L, Yoo HM, Venkateswaran U, Arthur JR Journal of Vacuum Science & Technology B, 16(3), 1356, 1998 |