| 1 |
Systematic study of the complex structure of N-1 Deep Level Transient Spectroscopy signal in Cu(In,Ga)Se-2 based heterojunctions
Zabierowski P, Stankiewicz K, Donmez A, Couzinie-Devy F, Barreau N
Thin Solid Films, 519(21), 7485, 2011 |
| 2 |
Metastability effects in InGaP solar cells
Sun GC, Bourgoin JC, de Angelis N, Yamaguchi M, Khan A, Takamoto T, Gilard O
Solar Energy Materials and Solar Cells, 75(1-2), 293, 2003 |
| 3 |
Persistent photoconductivity in ZnCdSe MBE films grown on GaAs
Hernandez L, Rivera-Alvarez Z, Hernandez-Ramirez LM, Hernandez-Calderon I
Solid-State Electronics, 47(4), 759, 2003 |
| 4 |
DX centers in Si-doped InxAl1-xAs (0.3 <= x <= 0.5)
Isler M
Solid-State Electronics, 46(4), 585, 2002 |
| 5 |
Novel applications of X-ray analysis to microelectronic materials and devices
Cargill GS
Solid-State Electronics, 46(8), 1139, 2002 |
| 6 |
The origins of the DX center formation in unintentionally doped GaN epilayers grown on sapphire substrates
Kang TW, Park CS, Kim TW
Applied Surface Science, 180(1-2), 81, 2001 |
| 7 |
Stoichiometry and Te related defect in n-Al0.3Ga0.7As
Murai A, Oyama Y, Nishizawa J
Journal of Crystal Growth, 210(1-3), 251, 2000 |
| 8 |
Process control of high volume pseudomorphic high electron mobility transistor and metal-semiconductor field effect transistor molecular beam epitaxy production using temperature-dependent photoluminescence
Liu W, Lin ME
Journal of Vacuum Science & Technology B, 18(3), 1663, 2000 |
| 9 |
Characteristics of electron traps in Si-doped Ga0.51In0.49P and electrical properties of modulation doped GaInP/InGaAs/GaAs heterostructures
Besikci C, Civan Y
Thin Solid Films, 338(1-2), 213, 1999 |
| 10 |
Effects of stoichiometry and Te concentration on the deep levels in liquid-phase epitaxially grown n-type Al0.3Ga0.7As5
Nishizawa J, Murai A, Oyama Y, Suto K
Journal of the Electrochemical Society, 145(8), 2905, 1998 |
