| 1 |
Band gap engineered resistor for mitigating linear energy transfer sensitivities in scaled submiron CMOS technology SRAM cells
Kanyogoro E, Peckerar M, Hughes H, Liu M
Solid-State Electronics, 52(10), 1555, 2008 |
| 2 |
Effect of rapid thermal annealing on electron emission and DX centers in strained InGaAs/GaAs single quantum well laser diodes
Lu LW, Zhang YH, Xu ZT, Xu ZY, Wang ZG, Wang J, Ge WK
Journal of Crystal Growth, 218(1), 13, 2000 |
| 3 |
Investigation of persistent photoconductivity in a Ge-doped ZnSe epilayer
Zhang L, Dai N, Hu GJ, Chen LY, Tamargo MC
Journal of Vacuum Science & Technology A, 18(2), 560, 2000 |
| 4 |
Lattice relaxation in heavily In-doped CdTe films
Castro-Rodriguez R, Zapata-Navarro A, Zapata-Torres M, Pena JL
Journal of Materials Science Letters, 18(2), 153, 1999 |
| 5 |
Deep levels in low temperature GaAs probed by field effect deep level transient spectroscopy
Halder NC, Goodman T
Journal of Vacuum Science & Technology B, 17(1), 60, 1999 |
| 6 |
More exact method of determination of the trap concentration of deep levels: Application to molecular beam epitaxy-grown, low temperature GaAs
Halder NC, Zhao X
Journal of Vacuum Science & Technology B, 17(5), 2019, 1999 |
| 7 |
Role of rate window, transient time, and reverse bias field on the deep levels of LT-GaAs by field effect transient spectroscopy
Halder NC, Goodman T
Journal of Vacuum Science & Technology B, 15(6), 2057, 1997 |
| 8 |
Transmission electron microscopy study of Si delta-doped GaAs/AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures
Molina SI, Walther T
Thin Solid Films, 307(1-2), 6, 1997 |
| 9 |
Modifications of the 3-Dimensional Transport-Properties of Si-Doped Al0.25Ga0.75As Exposed to CH4/H-2 Reactive Ion Etching
Pereira RG, Vanhove M, Vanrossum M
Journal of Vacuum Science & Technology B, 14(1), 106, 1996 |
| 10 |
Influence of CH4/H-2 Reactive Ion Etching on the Deep Levels of Si-Doped AlxGa1-xAs (X=0.25)
Pereira RG, Vanhove M, Depotter M, Vanrossum M
Journal of Vacuum Science & Technology B, 14(3), 1773, 1996 |
