검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Passivation of AlN/GaN high electron mobility transistor using ozone treatment Lo CF, Chang CY, Pearton SJ, Kravchenko II, Dabiran AM, Wowchak AM, Cui B, Chow PP, Ren F Journal of Vacuum Science & Technology B, 28(1), 52, 2010 |
| 2 |
Semi-insulating, Fe-Doped buffer layers grown by molecular beam epitaxy Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Yugova TG, Petrova EA, Dabiran AM, Wowchak AM, Osinsky AV, Chow PP, Pearton SJ, Shcherbatchev KD, Bublik VT Journal of the Electrochemical Society, 154(9), H749, 2007 |
| 3 |
Electrical, photoelectrical, and luminescent properties of doped p-type GaN superlattices Polyakov AY, Smirnov NB, Govorkov AV, Shcherbatchev KD, Bublik VT, Voronova MI, Dabiran AM, Osinsky AV, Pearton SJ Journal of Vacuum Science & Technology B, 25(1), 69, 2007 |
| 4 |
Optical characterization of ZnMnO-based dilute magnetic semiconductor structures Buyanova IA, Chen WM, Ivill MP, Pate R, Norton DP, Pearton SJ, Dong JW, Osinsky A, Hertog B, Dabiran AM, Chow PP Journal of Vacuum Science & Technology B, 24(1), 259, 2006 |
| 5 |
Comparison of Ir and Ni-based Ohmic contacts for AlGaN/GaN high electron mobility transistors Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, La Roche JR, Ren F, Pearton SJ Journal of Vacuum Science & Technology B, 22(2), 619, 2004 |
| 6 |
Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN/GaN high electron mobility transistors Kang BS, Kim S, La Roche JR, Ren F, Fitch RC, Gillespie JK, Moser N, Jenkins T, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, Pearton SJ Journal of Vacuum Science & Technology B, 22(6), 2635, 2004 |
| 7 |
Temperature dependence of pnp GaN/InGaN HBT performance Lee KP, Dabiran AM, Chow PP, Osinsky A, Pearton SJ, Ren F Solid-State Electronics, 48(1), 37, 2004 |
| 8 |
0.15 mu m gate-length AlGaN/GaN HEMTs with varying gate recess length Kuliev A, Kumar V, Schwindt R, Selvanathan D, Dabiran AM, Chow P, Adesida I Solid-State Electronics, 47(1), 117, 2003 |
| 9 |
Simulations of InGaN-base heterojunction bipolar transistors Lee KP, Ren F, Pearton SJ, Dabiran AM, Chow PP Solid-State Electronics, 47(6), 1009, 2003 |
| 10 |
Effects of base structure on performance of GaN-based heterojunction bipolar transistors Lee KP, Ren F, Pearton SJ, Dabiran AM, Chow PP Solid-State Electronics, 47(6), 1031, 2003 |