검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
A 0.10 mu m buried p-channel MOSFET with through the gate boron implantation and arsenic tilted pocket Guegan G, Deleonibus S, Caillat C, Tedesco S, Dal'zotto B, Heitzmann M, Nier ME, Mur P Solid-State Electronics, 46(3), 343, 2002 |
| 2 |
A 20 nm physical gate length NMOSFET with a 1.2 nm gate oxide fabricated by mixed dry and wet hard mask etching Caillat C, Deleonibus S, Guegan G, Heitzmann M, Nier ME, Tedesco S, Dal'zotto B, Martin F, Mur P, Papon AM, Lecarval G, Previtali B, Toffoli A, Allain F, Biswas S, Jourdan F, Fugier P, Dichiaro JL Solid-State Electronics, 46(3), 349, 2002 |
| 3 |
Resolution limit of negative tone chemically amplified resist used for hybrid lithography: Influence of the molecular weight Pain L, Higgins C, Scarfogliere B, Tedesco S, Dal'Zotto B, Gourgon C, Ribeiro M, Kusumoto T, Suetsugu M, Hanawa R Journal of Vacuum Science & Technology B, 18(6), 3388, 2000 |
| 4 |
Measuring acid generation efficiency in chemically amplified resists with all three beams Szmanda CR, Brainard RL, Mackevich JF, Awaji A, Tanaka T, Yamada Y, Bohland J, Tedesco S, Dal'Zotto B, Bruenger W, Torkler M, Fallmann W, Loeschner H, Kaesmaier R, Nealey PM, Pawloski AR Journal of Vacuum Science & Technology B, 17(6), 3356, 1999 |
| 5 |
Resist processes for hybrid (electron-beam deep ultraviolet) lithography Tedesco S, Mourier T, Dal'zotto B, McDougall A, Blanc-Coquant S, Quere Y, Paniez PJ, Mortini B Journal of Vacuum Science & Technology B, 16(6), 3676, 1998 |
| 6 |
Specific behavior of chemically amplified systems with low activation energy under electron-beam exposure : Implementation of 248 and 193 nm resists Mortini B, Tedesco S, Dal'Zotto B, Paniez P Journal of Vacuum Science & Technology B, 15(6), 2534, 1997 |