검색결과 : 22건
| No. | Article |
|---|---|
| 1 |
Tunable metamaterial device for THz applications based on BaSrTiO3 thin film Shreiber D, Zhou W, Dang G, Taysing-Lara M, Metcalfe G, Ngo E, Ivill M, Hirsch SG, Cole MW Thin Solid Films, 660, 282, 2018 |
| 2 |
High-level semi-synthetic production of the potent antimalarial artemisinin Paddon CJ, Westfall PJ, Pitera DJ, Benjamin K, Fisher K, McPhee D, Leavell MD, Tai A, Main A, Eng D, Polichuk DR, Teoh KH, Reed DW, Treynor T, Lenihan J, Fleck M, Bajad S, Dang G, Dengrove D, Diola D, Dorin G, Ellens KW, Fickes S, Galazzo J, Gaucher SP, Geistlinger T, Henry R, Hepp M, Horning T, Iqbal T, Jiang H, Kizer L, Lieu B, Melis D, Moss N, Regentin R, Secrest S, Tsuruta H, Vazquez R, Westblade LF, Xu L, Yu M, Zhang Y, Zhao L, Lievense J, Covello PS, Keasling JD, Reiling KK, Renninger NS, Newman JD Nature, 496(7446), 528, 2013 |
| 3 |
Design and synthesis of a tribranched phenylethynyl-terminated aryl ether compound and its use as a reactive diluent for PETI-5 Rao X, Dang G, Zhou H, Yang W, Cui G, Chen C, Yokota R Journal of Polymer Science Part A: Polymer Chemistry, 45(21), 4844, 2007 |
| 4 |
Novel reconfigurable semiconductor photonic crystal-MEMS device Zhou WM, Mackie DM, Taysing-Lara M, Dang G, Newman PG, Svensson S Solid-State Electronics, 50(6), 908, 2006 |
| 5 |
Finite difference analysis of thermal characteristics of CW operation 850 nm lateral current injection and implant-apertured VCSEL with flip-chip bond design Mehandru R, Dang G, Kim S, Ren F, Hobson WS, Lopata J, Pearton SJ, Chang W, Shen H Solid-State Electronics, 46(5), 699, 2002 |
| 6 |
GaN pnp bipolar junction transistors operated to 250 degrees C Zhang AP, Dang G, Ren F, Han J, Monier C, Baca AG, Cao XA, Cho H, Abernathy CR, Pearton SJ Solid-State Electronics, 46(6), 933, 2002 |
| 7 |
Temperature characteristics of 850 nm, intra-cavity contacted, shallow implant-apertured vertical-cavity surface-emitting lasers Dang G, Luo B, Ren F, Hobson WS, Lopata J, Pearton SJ, Chang W, Shen H Solid-State Electronics, 46(8), 1247, 2002 |
| 8 |
GaN bipolar junction transistors with regrown emitters Zhang AP, Han J, Ren F, Waldrip KE, Abernathy CR, Luo B, Dang G, Johnson JW, Lee KP, Pearton SJ Electrochemical and Solid State Letters, 4(5), G39, 2001 |
| 9 |
Device series resistance calculations for vertical cavity surface-emitting lasers Dang G, Luo B, Ren F, Hobson WS, Lopata J, Chu SNG, Pearton SJ Electrochemical and Solid State Letters, 4(12), G112, 2001 |
| 10 |
Comparison of dry and wet etch processes for patterning SiO2/TiO2 distributed Bragg reflectors for vertical-cavity surface-emitting lasers Dang G, Cho H, Ip KP, Pearton SJ, Chu SNG, Lopata J, Hobson WS, Chirovsky LMF, Ren F Journal of the Electrochemical Society, 148(2), G25, 2001 |