화학공학소재연구정보센터
검색결과 : 12건
No. Article
1 Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature
Mata R, Hestroffer K, Budagosky J, Cros A, Bougerol C, Renevier H, Daudin B
Journal of Crystal Growth, 334(1), 177, 2011
2 Growth of GaN/AlN quantum dots on SiC(000(1)over-bar) by plasma-assisted MBE
Gogneau N, Fossard F, Monroy E, Monnoye S, Mank H, Daudin B
Materials Science Forum, 457-460, 1557, 2004
3 Control of the 2D/3D transition of cubic GaN/AlN nanostructures on 3C-SiC epilayers
Founta S, Gogneau N, Martinez-Guerrero E, Ferro G, Monteil Y, Daudin B, Mariette H
Materials Science Forum, 457-460, 1561, 2004
4 Growth of n-face polarity III-nitride heterostructures on C-face 4H-SiC by plasma-assisted MBE
Monroy E, Sarigiannidou E, Fossard F, Enjalbert F, Gogneau N, Bellet-Amalric E, Brault J, Rouviere JL, Dang LS, Monnoye S, Mank H, Daudin B
Materials Science Forum, 457-460, 1573, 2004
5 Direct growth of high quality GaN by plasma assisted molecular beam epitaxy on 4H-SiC substrates
Fossard F, Brault J, Gogneau N, Monroy E, Enjalbert F, Dang LS, Bellet-Amalric E, Monnoye S, Mank H, Daudin B
Materials Science Forum, 457-460, 1577, 2004
6 Photoluminescence of GaN/AlN quantum dots grown on SiC substrates
Fossard F, Gogneau N, Monroy E, Dang LS, Monnoye S, Mank H, Daudin B
Materials Science Forum, 457-460, 1593, 2004
7 Epitaxial growth of Fe films on cubic GaN(001)
Lallaizon C, Schieffer P, Lepine B, Guivarc'h A, Abel F, Cohen C, Feuillet G, Daudin B, Van Dau FN
Journal of Crystal Growth, 240(1-2), 236, 2002
8 3C-SiC pseudosubstrates for the growth of cubic GaN
Aboughe-Nze P, Chassagne T, Chaussende D, Monteil Y, Cauwet F, Bustarret E, Deneuville A, Bentoumi G, Martinez-Guerrerro E, Daudin B, Feuillet G
Materials Science Forum, 338-3, 1467, 2000
9 Si doping of cubic heteroepitaxial GaN layers studied by Raman scattering
Bentoumi G, Deneuville A, Bustarret E, Daudin B, Feuillet G, Martinez E, Aboughe-Nze P, Monteil Y
Thin Solid Films, 364(1-2), 107, 2000
10 Strain in cubic GaN films versus residual hexagonal GaN content
Bentoumi G, Deneuville A, Bustarret E, Daudin B, Feuillet G
Thin Solid Films, 364(1-2), 114, 2000