화학공학소재연구정보센터
검색결과 : 10건
No. Article
1 Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies
Flores S, Reyes DF, Braza V, Richards RD, Bastiman F, Ben T, Ruiz-Marin N, David JPR, Gonzalez D
Applied Surface Science, 485, 29, 2019
2 Influence of growth conditions on the structural and opto-electronic quality of GaAsBi
Rockett TBO, Richards RD, Gu Y, Harun F, Liu Y, Zhou Z, David JPR
Journal of Crystal Growth, 477, 139, 2017
3 Absorption coefficients in AIGaInP lattice-matched to GaAs
Cheong JS, Baharuddin ANAP, Ng JS, Krysa AB, David JPR
Solar Energy Materials and Solar Cells, 164, 28, 2017
4 Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices
Richards RD, Mellor A, Harun F, Cheong JS, Hylton NP, Wilson T, Thomas T, Roberts JS, Ekins-Daukes NJ, David JPR
Solar Energy Materials and Solar Cells, 172, 238, 2017
5 MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization
Richards RD, Bastiman F, Roberts JS, Beanland R, Walker D, David JPR
Journal of Crystal Growth, 425, 237, 2015
6 Molecular beam epitaxy growth of GaAsBi using As-2 and As-4
Richards RD, Bastiman F, Hunter CJ, Mendes DF, Mohmad AR, Roberts JS, David JPR
Journal of Crystal Growth, 390, 120, 2014
7 Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth
Bastiman F, Mohmad ARB, Ng JS, David JPR, Sweeney SJ
Journal of Crystal Growth, 338(1), 57, 2012
8 Bi incorporation in GaAs(100)-2 x 1 and 4 x 3 reconstructions investigated by RHEED and STM
Bastiman F, Cullis AG, David JPR, Sweeney SJ
Journal of Crystal Growth, 341(1), 19, 2012
9 Avalanche multiplication and breakdown in 4H-SiC diodes
Ng BK, David JPR, Massey DJ, Tozer RC, Rees GJ, Yan F, Zhao JH, Weiner M
Materials Science Forum, 457-460, 1069, 2004
10 Demonstration of 4H-SiC avalanche photodiodes linear array
Yan F, Qin C, Zhao JH, Bush M, Olsen G, Ng BK, David JPR, Tozer RC, Weiner M
Solid-State Electronics, 47(2), 241, 2003