검색결과 : 10건
No. | Article |
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1 |
Modelling of bismuth segregation in InAsBi/InAs superlattices: Determination of the exchange energies Flores S, Reyes DF, Braza V, Richards RD, Bastiman F, Ben T, Ruiz-Marin N, David JPR, Gonzalez D Applied Surface Science, 485, 29, 2019 |
2 |
Influence of growth conditions on the structural and opto-electronic quality of GaAsBi Rockett TBO, Richards RD, Gu Y, Harun F, Liu Y, Zhou Z, David JPR Journal of Crystal Growth, 477, 139, 2017 |
3 |
Absorption coefficients in AIGaInP lattice-matched to GaAs Cheong JS, Baharuddin ANAP, Ng JS, Krysa AB, David JPR Solar Energy Materials and Solar Cells, 164, 28, 2017 |
4 |
Photovoltaic characterisation of GaAsBi/GaAs multiple quantum well devices Richards RD, Mellor A, Harun F, Cheong JS, Hylton NP, Wilson T, Thomas T, Roberts JS, Ekins-Daukes NJ, David JPR Solar Energy Materials and Solar Cells, 172, 238, 2017 |
5 |
MBE grown GaAsBi/GaAs multiple quantum well structures: Structural and optical characterization Richards RD, Bastiman F, Roberts JS, Beanland R, Walker D, David JPR Journal of Crystal Growth, 425, 237, 2015 |
6 |
Molecular beam epitaxy growth of GaAsBi using As-2 and As-4 Richards RD, Bastiman F, Hunter CJ, Mendes DF, Mohmad AR, Roberts JS, David JPR Journal of Crystal Growth, 390, 120, 2014 |
7 |
Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth Bastiman F, Mohmad ARB, Ng JS, David JPR, Sweeney SJ Journal of Crystal Growth, 338(1), 57, 2012 |
8 |
Bi incorporation in GaAs(100)-2 x 1 and 4 x 3 reconstructions investigated by RHEED and STM Bastiman F, Cullis AG, David JPR, Sweeney SJ Journal of Crystal Growth, 341(1), 19, 2012 |
9 |
Avalanche multiplication and breakdown in 4H-SiC diodes Ng BK, David JPR, Massey DJ, Tozer RC, Rees GJ, Yan F, Zhao JH, Weiner M Materials Science Forum, 457-460, 1069, 2004 |
10 |
Demonstration of 4H-SiC avalanche photodiodes linear array Yan F, Qin C, Zhao JH, Bush M, Olsen G, Ng BK, David JPR, Tozer RC, Weiner M Solid-State Electronics, 47(2), 241, 2003 |