검색결과 : 13건
| No. | Article |
|---|---|
| 1 |
Si passivation for Ge pMOSFETs: Impact of Si cap growth conditions Vincent B, Loo R, Vandervorst W, Delmotte J, Douhard B, Valev VK, Vanbel M, Verbiest T, Rip J, Brijs B, Conard T, Claypool C, Takeuchi S, Zaima S, Mitard J, De Jaeger B, Dekoster J, Caymax M Solid-State Electronics, 60(1), 116, 2011 |
| 2 |
Short-channel epitaxial germanium pMOS transistors Eneman G, De Jaeger B, Wang G, Mitard J, Hellings G, Brunco DP, Simoen E, Loo R, Caymax M, Claeys C, De Meyer K, Meuris M, Heyns MM Thin Solid Films, 518, S88, 2010 |
| 3 |
P plus /n junction leakage in thin selectively grown Ge-in-STI substrates Eneman G, Yang R, Wang G, De Jaeger B, Loo R, Claeys C, Caymax M, Meuris M, Heyns MM, Simoen E Thin Solid Films, 518(9), 2489, 2010 |
| 4 |
Low-frequency noise assessment of the silicon passivation of Ge pMOSFETs Simoen E, Firrincieli A, Leys F, Loo R, De Jaeger B, Mitard J, Claeys C Thin Solid Films, 518(9), 2493, 2010 |
| 5 |
Device performance of p-Ge MOSFETs at liquid nitrogen temperature Ohyama H, Sukizaki H, Takakura K, Motoki M, Matsuo K, Nakamura H, Sawada M, Midorikawa C, Kuboyama S, De Jaeger B, Simoen E, Claeys C Thin Solid Films, 518(9), 2513, 2010 |
| 6 |
Fabrication of high quality Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches Wang G, Loo R, Takeuchi S, Souriau L, Lin JC, Moussa A, Bender H, De Jaeger B, Ong P, Lee W, Meuris M, Caymax M, Vandervorst W, Blanpain B, Heyns MM Thin Solid Films, 518(9), 2538, 2010 |
| 7 |
Observation and suppression of nickel germanide overgrowth on germanium substrates with patterned SiO2 structures Brunco DP, Opsomer K, De Jaeger B, Winderickx G, Verheyden K, Meuris M Electrochemical and Solid State Letters, 11(2), H39, 2008 |
| 8 |
Processing factors impacting the leakage current and flicker noise of germanium p(+)-n junctions on silicon substrates Simoen E, Sonde S, Claeys C, Satta A, De Jaeger B, Todi R, Meuris M Journal of the Electrochemical Society, 155(3), H145, 2008 |
| 9 |
Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance Brunco DP, De Jaeger B, Eneman G, Mitard J, Hellings G, Satta A, Terzieva V, Souriau L, Leys FE, Pourtois G, Houssa M, Winderickx G, Vrancken E, Sioncke S, Opsomer K, Nicholas G, Caymax M, Stesmans A, Van Steenbergen J, Mertens PW, Meuris M, Heyns MM Journal of the Electrochemical Society, 155(7), H552, 2008 |
| 10 |
Shallow junction ion implantation in Ge and associated defect control Satta A, Simoen E, Janssens T, Clarysse T, De Jaeger B, Benedetti A, Hoflijk I, Brijs B, Meuris M, Vandervorst W Journal of the Electrochemical Society, 153(3), G229, 2006 |