화학공학소재연구정보센터
검색결과 : 8건
No. Article
1 GaN quantum dot polarity determination by X-ray photoelectron diffraction
Romanyuk O, Bartos I, Brault J, De Mierry P, Paskova T, Jiricek P
Applied Surface Science, 389, 1156, 2016
2 Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells
Lekhal K, Hussain S, De Mierry P, Vennegues P, Nemoz M, Chauveau JM, Damilano B
Journal of Crystal Growth, 434, 25, 2016
3 Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults
Tendille F, De Mierry P, Vennegues P, Chenot S, Teisseire M
Journal of Crystal Growth, 404, 177, 2014
4 Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
Kim-Chauveau H, Frayssinet E, Damilano B, De Mierry P, Bodiou L, Nguyen L, Vennegues P, Chauveau JM, Cordier Y, Duboz JY, Charash R, Vajpeyi A, Lamy JM, Akhter M, Maaskant PP, Corbett B, Hangleiter A, Wieck A
Journal of Crystal Growth, 338(1), 20, 2012
5 The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
Kim-Chauveau H, de Mierry P, Chauveau JM, Duboz JY
Journal of Crystal Growth, 316(1), 30, 2011
6 Growth and characterization of polar (0001) and semipolar (11-22) InGaN/GaN quantum dots
Das A, Sinha P, Kotsar Y, Kandaswamy PK, Dimitrakopulos GP, Kehagias T, Komninou P, Nataf G, De Mierry P, Monroy E
Journal of Crystal Growth, 323(1), 161, 2011
7 Stacking faults blocking process in (11-22) semipolar GaN growth on sapphire using asymmetric lateral epitaxy
Kriouche N, Vennegues P, Nemoz M, Nataf G, De Mierry P
Journal of Crystal Growth, 312(19), 2625, 2010
8 Alumina-rich spinel: A new substrate for the growth of high quality GaN-based light-emitting diodes
Tinjod F, de Mierry P, Lancefield D, Bougrioua Z, Laugt S, Tottereau O, Lorenzini P, Chenot S, Virey E, Kokta MR, Stone-Sundberg JL, Pauwels D
Journal of Crystal Growth, 285(4), 450, 2005