검색결과 : 9건
| No. | Article |
|---|---|
| 1 |
Evaluation of atomic layer deposited NbN and NbSiN as metal gate materials Van Hoornick N, De Witte H, Witters T, Zhao C, Conard T, Huotari H, Swerts J, Schram T, Maes JW, De Gendt S, Heyns M Journal of the Electrochemical Society, 153(5), G437, 2006 |
| 2 |
On the reliability of SIMS depth profiles through HfO2-stacks Vandervorst W, Bennett J, Huyghebaert C, Conard T, Gondran C, De Witte H Applied Surface Science, 231-2, 569, 2004 |
| 3 |
Nitrogen analysis in high-k stack layers: a challenge Conard T, Vandervorst W, De Witte H, Van Elshocht S Applied Surface Science, 231-2, 581, 2004 |
| 4 |
Ion-bombardment artifact in TOF-SIMS analysis of ZrO2/SiO2/Si stacks De Witte H, Conard T, Vandervorst W, Gijbels R Applied Surface Science, 203, 523, 2003 |
| 5 |
In-line electrical metrology for high-K gate dielectrics deposited by atomic layer CVD De Witte H, Passefort S, Besling W, Maes JWH, Eason K, Young E, Rittersma ZM, Heyns M Journal of the Electrochemical Society, 150(9), F169, 2003 |
| 6 |
Investigation of fluorine in dry ultrathin silicon oxides Vereecke G, Rohr E, Carter RJ, Conard T, De Witte H, Heyns MM Journal of Vacuum Science & Technology B, 19(6), 2108, 2001 |
| 7 |
Evaluation of time-of-flight secondary ion mass spectrometry for metal contamination monitoring on Si wafer surfaces De Witte H, De Gendt S, Douglas M, Conard T, Kenis K, Mertens PW, Vandervorst W, Gijbels R Journal of the Electrochemical Society, 147(5), 1915, 2000 |
| 8 |
X-ray photoelectron spectroscopy and time-of-flight secondary ion mass spectrometry study of the role of Ti and TiN caps on the cobalt/SiO2 interface Conard T, Kondoh E, De Witte H, Maex K, Vandervorst W Journal of Vacuum Science & Technology A, 17(4), 1244, 1999 |
| 9 |
XPS and TOFSIMS studies of shallow Si/Si1-xGex/Si layers Conard T, De Witte H, Loo R, Verheyen P, Vandervorst W, Caymax M, Gijbels R Thin Solid Films, 343-344, 583, 1999 |