| 1 |
Defect suppression and photoresponsivity enhancement in methylammonium lead halide perovskites by CdSe/ZnS quantum dots
Vu TKO, Cho IW, Oh J, Lee DU, Ryu MY, Kim EK
Journal of Colloid and Interface Science, 590, 19, 2021 |
| 2 |
Exploration of the two-diode model of deep level transient spectroscopy signal originating from secondary barriers
Wisniewski K, Urbaniak A, Zabierowski P
Thin Solid Films, 674, 76, 2019 |
| 3 |
Electrical characterization and comparison of CIGS solar cells made with different structures and fabrication techniques
Garris RL, Johnston S, Li JV, Guthrey HL, Ramanathan K, Mansfield LM
Solar Energy Materials and Solar Cells, 174, 77, 2018 |
| 4 |
Determining the charge states and capture mechanisms of defects in silicon through accurate recombination analyses: A review
Rougieux FE, Sun C, Macdonald D
Solar Energy Materials and Solar Cells, 187, 263, 2018 |
| 5 |
Highly Improved Sb2S3 Sensitized-Inorganic-Organic Heterojunction Solar Cells and Quantification of Traps by Deep-Level Transient Spectroscopy
Choi YC, Lee DU, Noh JH, Kim EK, Seok SI
Advanced Functional Materials, 24(23), 3587, 2014 |
| 6 |
Low rate deep level transient spectroscopy - a powerful tool for defect characterization in wide bandgap semiconductors
Schmidt F, von Wenckstern H, Breitenstein O, Pickenhain R, Grundmann M
Solid-State Electronics, 92, 40, 2014 |
| 7 |
Low-temperature fabrication of Y2O3/Ge gate stacks with ultrathin GeOx interlayer and low interface states density characterized by a reliable deep-level transient spectroscopy method
Wang D, Nagatomi Y, Kojima S, Yamamoto K, Nakashima H
Thin Solid Films, 557, 288, 2014 |
| 8 |
Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD ( plus IBAD) methods. Part 1: Effective relative permittivity
Hartmanova M, Nadazdy V, Kundracik F, Mansilla C
Applied Surface Science, 269, 65, 2013 |
| 9 |
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA
Solid-State Electronics, 80, 19, 2013 |
| 10 |
Charge carrier traffic at self-assembled Ge quantum dots on Si
Kaniewska M, Engstrom O, Karmous A, Oehme M, Petersson G, Kasper E
Solid-State Electronics, 83, 99, 2013 |
