화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
Arehart AR, Sasikumar A, Rajan S, Via GD, Poling B, Winningham B, Heller ER, Brown D, Pei Y, Recht F, Mishra UK, Ringel SA
Solid-State Electronics, 80, 19, 2013
2 Broad range injection-dependent minority carrier lifetime from photoluminescence
Giesecke JA, Niewelt T, Rudiger M, Rauer M, Schubert MC, Warta W
Solar Energy Materials and Solar Cells, 102, 220, 2012
3 Deep-levels in stoichiometry-varied Cu(In,Ga)(S,Se)(2) solar cells
Deibel C, Wessel A, Dyakonov V, Parisi J, Palm J, Karg F
Thin Solid Films, 431-432, 163, 2003