검색결과 : 14건
| No. | Article |
|---|---|
| 1 |
Cubic boron phosphide epitaxy on zirconium diboride Padavala B, Al Atabi H, Tengdelius L, Lu J, Hogberg H, Edgar JH Journal of Crystal Growth, 483, 115, 2018 |
| 2 |
Investigation of dislocation migration in substrate-grade CdZnTe crystals during post-annealing Jia NB, Xu YD, Guo RR, Gu YX, Fu X, Wang YH, Jie WQ Journal of Crystal Growth, 457, 343, 2017 |
| 3 |
Solution growth of Si on reorganized porous Si foils and on glass substrates Ehlers C, Bansen R, Markurt T, Uebel D, Teubner T, Boeck T Journal of Crystal Growth, 468, 268, 2017 |
| 4 |
Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process Nakano S, Gao B, Kakimoto K Journal of Crystal Growth, 468, 839, 2017 |
| 5 |
An ultra-thin compliant sapphire membrane for the growth of less strained, less defective GaN Moon D, Jang J, Choi D, Shin IS, Lee D, Bae D, Park Y, Yoon E Journal of Crystal Growth, 441, 52, 2016 |
| 6 |
Epitaxial growth of InGaAs on MgAl2O4 spinel for one-sun photovoltaics Rance WL, Norman AG, Ptak AJ Journal of Crystal Growth, 363, 40, 2013 |
| 7 |
The effects of surface treatments of the substrates on high-quality GaN crystal growth Fujimori T, Maruyama M, Honjo M, Takazawa H, Murakami K, Imabayashi H, Todoroki Y, Matsuo D, Imade M, Yoshimura M, Mori Y Journal of Crystal Growth, 372, 73, 2013 |
| 8 |
Reduction of the dislocation density in molecular beam epitaxial CdTe(211)B on Ge(211) Badano G, Robin IC, Amstatt B, Gemain F, Baudry X Journal of Crystal Growth, 312(10), 1721, 2010 |
| 9 |
A proper solution to study the etch pits on LiAlO2 single crystal Huang HC, Chou MMC, Gan DS, Shen PY Journal of Crystal Growth, 313(1), 42, 2010 |
| 10 |
ISOVPE MCT films grown on pure and alloyed CdTe substrates with different crystalline orientations Gilabert U, Heredia E, Trigubo AB Journal of Crystal Growth, 295(1), 1, 2006 |