검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Optical characterization of the coloration process in electrochromic amorphous and crystalline WO3 films by spectroscopic ellipsometry Yuan GZ, Hua CZ, Huang L, Defranoux C, Basa P, Liu Y, Song CL, Han GR Applied Surface Science, 421, 630, 2017 |
| 2 |
Ellipsometry study of process deposition of amorphous Indium Gallium Zinc Oxide sputtered thin films Talagrand C, Boddaert X, Selmeczi DG, Defranoux C, Collot P Thin Solid Films, 590, 134, 2015 |
| 3 |
Study of annealing effects upon the optical and electrical properties of SnO2:F/SiCxOy low emissivity coatings by spectroscopic ellipsometry Wang KK, Cheng B, Wu B, Defranoux C, Basa P, Song CL, Han GR, Liu Y Thin Solid Films, 571, 720, 2014 |
| 4 |
High quality transparent conductive electrodes in organic photovoltaic devices Chakaroun M, Lucas B, Ratier B, Defranoux C, Piel JP, Aldissi M Thin Solid Films, 518(4), 1250, 2009 |
| 5 |
Modeling the short-circuit current density of polymer solar cells based on P3HT : PCBM blend Monestier F, Simon JJ, Torchio P, Escoubas L, Florya F, Bailly S, de Bettignies R, Guillerez S, Defranoux C Solar Energy Materials and Solar Cells, 91(5), 405, 2007 |
| 6 |
X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface Vitchev RG, Pireaux JJ, Conard T, Bender H, Wolstenholme J, Defranoux C Applied Surface Science, 235(1-2), 21, 2004 |
| 7 |
Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains Hartmann JM, Clavelier L, Jahan C, Holliger P, Rolland G, Billon T, Defranoux C Journal of Crystal Growth, 264(1-3), 36, 2004 |
| 8 |
Automated metrology system including VUV spectroscopic ellipsometry and X-ray reflectometry for 300 mm silicon microelectronics Boher R, Evrard R, Condat O, Dos Reis C, Defranoux C, Bellandi E Thin Solid Films, 450(1), 114, 2004 |
| 9 |
Infrared spectroscopic ellipsometry applied to the characterization of nano-structures of silicon IC manufacturing Boher P, Bucchia M, Guillotin C, Defranoux C Thin Solid Films, 450(1), 173, 2004 |
| 10 |
Infrared spectroscopic ellipsometry applied to the characterization of ultra shallow junction on silicon and SOI Defranoux C, Emeraud T, Bourtault S, Venturini J, Boher P, Hernandez M, Laviron C, Noguchi I Thin Solid Films, 455-56, 150, 2004 |