검색결과 : 15건
| No. | Article |
|---|---|
| 1 |
Formation of V-grooves on the (Al,Ga)N surface as means of tensile stress relaxation Cheng K, Leys M, Degroote S, Bender H, Favia P, Borghs G, Germain M Journal of Crystal Growth, 353(1), 88, 2012 |
| 2 |
Interface of GaN grown on Ge(111) by plasma assisted molecular beam epitaxy Lieten RR, Richard O, Degroote S, Leys M, Bender H, Borghs G Journal of Crystal Growth, 314(1), 71, 2011 |
| 3 |
AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation Cheng K, Degroote S, Leys M, Medjdoub F, Derluyn J, Sijmus B, Germain M, Borghs G Journal of Crystal Growth, 315(1), 204, 2011 |
| 4 |
Solid phase epitaxy of amorphous Ge films deposited by PECVD Ma QB, Lieten R, Leys M, Degroote S, Germain M, Borghs G Journal of Crystal Growth, 331(1), 40, 2011 |
| 5 |
Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers Lieten RR, Afanas'ev VV, Thoan NH, Degroote S, Walukiewicz W, Borghs G Journal of the Electrochemical Society, 158(4), G358, 2011 |
| 6 |
Suppression of domain formation in GaN layers grown on Ge(111) Lieten RR, Degroote S, Leys M, Borghs G Journal of Crystal Growth, 311(5), 1306, 2009 |
| 7 |
Controlled III/V Nanowire Growth by Selective-Area Vapor-Phase Epitaxy Cantoro M, Brammertz G, Richard O, Bender H, Clemente F, Leys M, Degroote S, Caymax M, Heyns M, De Gendt S Journal of the Electrochemical Society, 156(11), H860, 2009 |
| 8 |
Growth of InN on Ge(111) by molecular beam epitaxy using a GaN buffer Lieten RR, Degroote S, Leys M, Derluyn J, Kuijk M, Borghs G Journal of Crystal Growth, 310(6), 1132, 2008 |
| 9 |
Growth and characterization of unintentionally doped GaN grown on silicon(111) substrates Leys M, Cheng K, Derluyn J, Degroote S, Germain M, Borghs G, Taylor CA, Dawson P Journal of Crystal Growth, 310(23), 4888, 2008 |
| 10 |
GaAs on Ge for CMOS Brammertz G, Caymax M, Meuris M, Heyns M, Mols Y, Degroote S, Leys M Thin Solid Films, 517(1), 148, 2008 |