화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition
Erlbacher T, Jank MPM, Ryssel H, Frey L, Engl R, Walter A, Sezi R, Dehm C
Journal of the Electrochemical Society, 155(9), H693, 2008
2 Influence of the morphology of ferroelectric SrBi2Ta2O9 thin films deposited by metal organic decomposition on its electrical characteristics
Moert M, Schindler G, Mikolajick T, Nagel N, Hartner W, Dehm C, Kohlstedt H, Waser R
Applied Surface Science, 249(1-4), 23, 2005
3 Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9 film for high density ferroelectric random access memory applications at low voltage operation
Moert M, Mikolajick T, Schindler G, Nagel N, Kasko I, Hartner W, Dehm C, Kohlstedt H, Waser R
Thin Solid Films, 473(2), 328, 2005
4 Flexible organic circuits with printed gate electrodes
Zschieschang U, Klauk H, Halik M, Schmid G, Dehm C
Advanced Materials, 15(14), 1147, 2003
5 Chemical mechanical polishing of iridium and iridium oxide for damascene processes
Mainka G, Beitel G, Schnabel RF, Saenger A, Dehm C
Journal of the Electrochemical Society, 148(10), G552, 2001
6 Preparation and properties of dc-sputtered IrO2 and Ir thin films for oxygen barrier applications in advanced memory technology
Pinnow CU, Kasko I, Dehm C, Jobst B, Seibt M, Geyer U
Journal of Vacuum Science & Technology B, 19(5), 1857, 2001
7 Domain structure of (100) strontium bismuth tantalate (SBT) SrBi2Ta2O2 films
Zybill CE, Boubekeur H, Li B, Koch F, Schindler G, Dehm C
Thin Solid Films, 386(1), 59, 2001
8 Scanning probe microscopy - a tool for the investigation of high-k materials
Landau SA, Junghans N, Weiss PA, Kolbesen BO, Olbrich A, Schindler G, Hartner W, Hintermaier F, Dehm C, Mazure C
Applied Surface Science, 157(4), 387, 2000
9 Aspects of barium contamination in high dielectric dynamic random access memories
Boubekeur H, Hopfner J, Mikolajick T, Dehm C, Frey L, Ryssel H
Journal of the Electrochemical Society, 147(11), 4297, 2000