검색결과 : 9건
No. | Article |
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1 |
Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition Erlbacher T, Jank MPM, Ryssel H, Frey L, Engl R, Walter A, Sezi R, Dehm C Journal of the Electrochemical Society, 155(9), H693, 2008 |
2 |
Influence of the morphology of ferroelectric SrBi2Ta2O9 thin films deposited by metal organic decomposition on its electrical characteristics Moert M, Schindler G, Mikolajick T, Nagel N, Hartner W, Dehm C, Kohlstedt H, Waser R Applied Surface Science, 249(1-4), 23, 2005 |
3 |
Integration of stacked capacitor module with ultra-thin ferroelectric SrBi2Ta2O9 film for high density ferroelectric random access memory applications at low voltage operation Moert M, Mikolajick T, Schindler G, Nagel N, Kasko I, Hartner W, Dehm C, Kohlstedt H, Waser R Thin Solid Films, 473(2), 328, 2005 |
4 |
Flexible organic circuits with printed gate electrodes Zschieschang U, Klauk H, Halik M, Schmid G, Dehm C Advanced Materials, 15(14), 1147, 2003 |
5 |
Chemical mechanical polishing of iridium and iridium oxide for damascene processes Mainka G, Beitel G, Schnabel RF, Saenger A, Dehm C Journal of the Electrochemical Society, 148(10), G552, 2001 |
6 |
Preparation and properties of dc-sputtered IrO2 and Ir thin films for oxygen barrier applications in advanced memory technology Pinnow CU, Kasko I, Dehm C, Jobst B, Seibt M, Geyer U Journal of Vacuum Science & Technology B, 19(5), 1857, 2001 |
7 |
Domain structure of (100) strontium bismuth tantalate (SBT) SrBi2Ta2O2 films Zybill CE, Boubekeur H, Li B, Koch F, Schindler G, Dehm C Thin Solid Films, 386(1), 59, 2001 |
8 |
Scanning probe microscopy - a tool for the investigation of high-k materials Landau SA, Junghans N, Weiss PA, Kolbesen BO, Olbrich A, Schindler G, Hartner W, Hintermaier F, Dehm C, Mazure C Applied Surface Science, 157(4), 387, 2000 |
9 |
Aspects of barium contamination in high dielectric dynamic random access memories Boubekeur H, Hopfner J, Mikolajick T, Dehm C, Frey L, Ryssel H Journal of the Electrochemical Society, 147(11), 4297, 2000 |