화학공학소재연구정보센터
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No. Article
1 Electronic properties of negatively charged SiOx films deposited by Atmospheric Pressure Plasma Liquid Deposition for surface passivation of p-type c-Si solar cells
Kotipalli R, Descamps P, Delamare R, Kaiser V, Beaucarne G, Flandre D
Thin Solid Films, 611, 74, 2016
2 Advances in the deposition of microcrystalline silicon at high rate by distributed electron cyclotron resonance
Cabarrocas PRI, Bulkin P, Daineka D, Dao TH, Leempoel P, Descamps P, de Meerendre TK, Charliac J
Thin Solid Films, 516(20), 6834, 2008
3 Distributed electron cyclotron resonance plasma: A technology for large area deposition of device-quality a-Si : H at very high rate
Leempoel P, Descamps P, de Meerendre TK, Charliac J, Cabarrocas PRI, Bulkin P, Daineka D, Dao TH, Kleider JP, Gueunier-Farret ME, Longeaud C
Thin Solid Films, 516(20), 6853, 2008
4 Analytic description of scanning capacitance microscopy
Murray H, Germanicus R, Doukkali A, Martin P, Domenges B, Descamps P
Journal of Vacuum Science & Technology B, 25(4), 1340, 2007
5 Effect of thermal coupling on the electronic properties of hydrogenated amorphous silicon thin films deposited by electron cyclotron resonance
Dao TH, Gueunier-Farret ME, Daineka D, Bulkin P, Cabarrocas PRI, Kleider JP, Longeaud C, Bazin C, de Meerendre TK, Descamps P, Leempoel P
Thin Solid Films, 515(19), 7650, 2007