검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Vacancy defects in as-polished and in high-fluence H(+)-implanted 6H-SiC detected by slow positron annihilation spectroscopy Barthe MF, Desgardin P, Henry L, Corbel C, Britton DT, Kogel G, Sperr P, Triftshauser W, Vicente P, diCioccio L Materials Science Forum, 389-3, 493, 2002 |
| 2 |
Na/Carbon-Rich Beta-SiC(100) Surface - Initial Interface Formation and Metallization Semond F, Soukiassian P, Mangat PS, Dicioccio L Journal of Vacuum Science & Technology B, 13(4), 1591, 1995 |