| 1 |
Nonpolar m-plane AlxGa1-xN layers grown on m-plane sapphire by MOVPE
Dinh DV, Amano H, Pristovsek M
Journal of Crystal Growth, 512, 100, 2019 |
| 2 |
How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire
Hu N, Dinh DV, Pristovsek M, Honda Y, Amano H
Journal of Crystal Growth, 507, 205, 2019 |
| 3 |
MOVPE growth and high-temperature annealing of (10(1)over-bar0) AlN layers on (10(1)over-bar0) sapphire
Dinh DV, Amano H, Pristovsek M
Journal of Crystal Growth, 502, 14, 2018 |
| 4 |
Control growth orientation of semipolar GaN layers grown on 3C-SiC/(001) Si
Dinh DV, Parbrook PJ
Journal of Crystal Growth, 501, 34, 2018 |
| 5 |
High-temperature thermal annealing of nonpolar (10(1)over-bar0) AlN layers sputtered on (1 0(1)over-bar0) sapphire
Dinh DV, Hu N, Honda Y, Amano H, Pristovsek M
Journal of Crystal Growth, 498, 377, 2018 |
| 6 |
Effect of V/III ratio on the growth of (11(2)over-bar2) AlGaN by metalorganic vapour phase epitaxy
Dinh DV, Alam SN, Parbrook PJ
Journal of Crystal Growth, 435, 12, 2016 |
| 7 |
Silicon doping of semipolar (11(2)over-bar2) AlxGa1-xN (0.50 <= x <= 0.55)
Dinh DV, Pampili P, Parbrook PJ
Journal of Crystal Growth, 451, 181, 2016 |
| 8 |
Single phase (11(2)over-bar2) AIN grown on (10(1)over-bar0) sapphire by metalorganic vapour phase epitaxy
Dinh DV, Conroy M, Zubialevich VZ, Petkov N, Holmes JD, Parbrook PJ
Journal of Crystal Growth, 414, 94, 2015 |
| 9 |
Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
Skuridina D, Dinh DV, Pristovsek M, Lacroix B, Chauvat MP, Ruterana P, Kneissl M, Vogt P
Applied Surface Science, 307, 461, 2014 |
| 10 |
Synthesis and field emission properties of triangular-shaped GaN nanowires on Si(100) substrates
Dinh DV, Kang SM, Yang JH, Kim SW, Yoon DH
Journal of Crystal Growth, 311(3), 495, 2009 |
