화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Quantitative two-dimensional profiling of 0.35 mu m transistors with lightly doped drain structures
McDonald A, Mahaffy R, Wang XD, Kuklewicz C, Shih CK, Dennis M, Tiffin D, Kadoch D, Duane M
Journal of Vacuum Science & Technology B, 18(1), 572, 2000
2 Metal-oxide-semiconduct or field-effect transistor junction requirements
Duane M, Lynch W
Journal of Vacuum Science & Technology B, 16(1), 306, 1998
3 Dopant Profile Control and Metrology Requirements for Sub-0.5 Mu-M Metal-Oxide-Semiconductor Field-Effect Transistors
Duane M, Nunan P, Terbeek M, Subrahmanyan R
Journal of Vacuum Science & Technology B, 14(1), 218, 1996