| 1 |
New modeling method for the dielectric relaxation of a DRAM cell capacitor
Choi S, Sun W, Shin H
Solid-State Electronics, 140, 29, 2018 |
| 2 |
Improved leakage current properties of ZrO2/(Ta/Nb)O-x-Al2O3/ZrO2 nanolaminate insulating stacks for dynamic random access memory capacitors
Onaya T, Nabatame T, Sawada T, Kurishima K, Sawamoto N, Ohi A, Chikyow T, Ogura A
Thin Solid Films, 655, 48, 2018 |
| 3 |
The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications
Song H, Jeon H, Shin C, Shin S, Jang W, Park J, Chang J, Choi JH, Kim Y, Lim H, Seo H, Jeon H
Thin Solid Films, 619, 317, 2016 |
| 4 |
Capacitorless single transistor dynamic random-access memory devices fabricated on silicon-germanium-on-insulator substrates
Jung SM, Cho WJ
Thin Solid Films, 520(19), 6268, 2012 |
| 5 |
A mechanism for asymmetric data writing failure
Lee MJ, Park KW
Solid-State Electronics, 56(1), 211, 2011 |
| 6 |
A comparative study of the DRAM leakage mechanism for planar and recessed channel MOSFETs
Lee MJ, Baek CK, Park S, Chung IY, Park YJ
Solid-State Electronics, 53(9), 998, 2009 |
