| 1 |
Characterization of high-quality kerfless epitaxial silicon for solar cells: Defect sources and impact on minority-carrier lifetime
Kivambe MM, Powell DM, Castellanos S, Jensen MA, Morishige AE, Lai B, Hao RY, Ravi TS, Buonassisi T
Journal of Crystal Growth, 483, 57, 2018 |
| 2 |
Detailed analysis of III-V/epi-SiGe tandem solar cell performance including light trapping schemes
Lachaume R, Foldyna M, Hamon G, Decobertd J, Cariou R, Cabarrocas PRI, Alvarez J, Kleider JP
Solar Energy Materials and Solar Cells, 166, 276, 2017 |
| 3 |
Superhigh-Rate Epitaxial Silicon Thick Film Deposition from Trichlorosilane by Mesoplasma Chemical Vapor Deposition
Wu SD, Kambara M, Yoshida T
Plasma Chemistry and Plasma Processing, 33(2), 433, 2013 |
| 4 |
Surface morphology control of epitaxial silicon films grown by hot wire chemical vapor deposition using hydrogen dilution
Lee SR, Ahn KM, Kang SM, Ahn BT
Solar Energy Materials and Solar Cells, 94(3), 606, 2010 |
| 5 |
Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopy
Gielis JJH, Hoex B, van den Oever PJ, de Sanden MCMV, Kessels WMM
Thin Solid Films, 517(12), 3456, 2009 |
| 6 |
2-D hole gas with two-subband occupation in a strained Ge channel: Scattering mechanisms
Rossner B, von Kanel H, Chrastina D, Isella G, Batlogg B
Thin Solid Films, 508(1-2), 351, 2006 |
| 7 |
Kinetic modeling and dopant effect on silicon deposition - Low pressure and plasma assisted chemical vapor deposition
Masi M, Zonca R, Carra S
Journal of the Electrochemical Society, 146(1), 103, 1999 |
| 8 |
Low temperature growth of p-type crystalline silicon films by ECR plasma CVD
Wang LC, Reehal HS
Thin Solid Films, 343-344, 571, 1999 |
| 9 |
Rapid Thermal-Processing - Fixing Problems with the Concept of Thermal Budget
Ditchfield R, Seebauer EG
Journal of the Electrochemical Society, 144(5), 1842, 1997 |
