검색결과 : 6건
No. | Article |
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1 |
Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination Debiossac M, Atkinson P, Zugarramurdi A, Eddrief M, Finocchi F, Etgens VH, Momeni A, Khemliche H, Borisov AG, Roncin P Applied Surface Science, 391, 53, 2017 |
2 |
Highly oriented star-like patterns observed on GaSe epilayers grown on Si(111) Jurca HF, Mazzaro I, Schreiner WH, Mosca DH, Eddrief M, Etgens VH Thin Solid Films, 515(4), 1470, 2006 |
3 |
Growth morphology of MnAs epilayers on GaAS(111)-B substrates by molecular beam epitaxy Etgens VH, Eddrief M, Demaille D, Zheng YL, Ouerghi A Journal of Crystal Growth, 240(1-2), 64, 2002 |
4 |
Study of Fe deposition upon a layered compound: GaSe Zerrouki M, Lacharme JP, Ghamnia M, Sebenne CA, Eddrief M, Abidri B Applied Surface Science, 166(1-4), 143, 2000 |
5 |
Stress relaxation at forming GaSe-Si(111) interfaces Amimer K, Eddrief M, Sebenne CA Journal of Crystal Growth, 217(4), 371, 2000 |
6 |
X-Ray, Reflection High Electron-Energy Diffraction and X-Ray Photoelectron-Spectroscopy Studies of InSe and Gamma-In2Se3 Thin-Films Grown by Molecular-Beam Deposition Brahimotsmane L, Emery JY, Eddrief M Thin Solid Films, 237(1-2), 291, 1994 |