화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination
Debiossac M, Atkinson P, Zugarramurdi A, Eddrief M, Finocchi F, Etgens VH, Momeni A, Khemliche H, Borisov AG, Roncin P
Applied Surface Science, 391, 53, 2017
2 Highly oriented star-like patterns observed on GaSe epilayers grown on Si(111)
Jurca HF, Mazzaro I, Schreiner WH, Mosca DH, Eddrief M, Etgens VH
Thin Solid Films, 515(4), 1470, 2006
3 Growth morphology of MnAs epilayers on GaAS(111)-B substrates by molecular beam epitaxy
Etgens VH, Eddrief M, Demaille D, Zheng YL, Ouerghi A
Journal of Crystal Growth, 240(1-2), 64, 2002
4 Study of Fe deposition upon a layered compound: GaSe
Zerrouki M, Lacharme JP, Ghamnia M, Sebenne CA, Eddrief M, Abidri B
Applied Surface Science, 166(1-4), 143, 2000
5 Stress relaxation at forming GaSe-Si(111) interfaces
Amimer K, Eddrief M, Sebenne CA
Journal of Crystal Growth, 217(4), 371, 2000
6 X-Ray, Reflection High Electron-Energy Diffraction and X-Ray Photoelectron-Spectroscopy Studies of InSe and Gamma-In2Se3 Thin-Films Grown by Molecular-Beam Deposition
Brahimotsmane L, Emery JY, Eddrief M
Thin Solid Films, 237(1-2), 291, 1994