검색결과 : 275건
| No. | Article |
|---|---|
| 1 |
New physical insight in structural and electronic properties of InSb nano-sheet being rolled up into single-wall nanotubes Jalil A, Agathopoulos S, Khan NZ, Khan SA, Kiani M, Khan K, Zhu L Applied Surface Science, 487, 550, 2019 |
| 2 |
InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET Cerba T, Hauchecorne P, Martin M, Moeyaert J, Alcotte R, Salem B, Eustache E, Bezard P, Chevalier X, Lombard G, Bassani F, David S, Beainy G, Tournie E, Patriarche G, Boutry H, Bawedin M, Baron T Journal of Crystal Growth, 510, 18, 2019 |
| 3 |
Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool Tsukui M, Iyechika Y, Nago H, Takahashi H Journal of Crystal Growth, 509, 103, 2019 |
| 4 |
Improvement of electrical characteristics in regrown AlGaN/GaN MOSFETs by suppression of the residual interface charge Tajima J, Hikosaka T, Kuraguchi M, Nunoue S Journal of Crystal Growth, 509, 129, 2019 |
| 5 |
Understanding and controlling Ga contamination in InAlN barrier layers Mrad M, Charles M, Mazel Y, Nolot E, Kanyandekwe J, Veillerot M, Ferret P, Feuillet G Journal of Crystal Growth, 507, 139, 2019 |
| 6 |
Effect of reactant gas stoichiometry of in-situ SiNx passivation on structural properties of MOCVD AlGaN/GaN HEMTs Siddique A, Ahmed R, Anderson J, Piner EL Journal of Crystal Growth, 517, 28, 2019 |
| 7 |
The impact of Ba substitution in lanthanum-strontium ferrite on the mobility of charge carriers Bamburov AD, Markov AA, Patrakeev MV, Leonidov IA Solid State Ionics, 332, 86, 2019 |
| 8 |
Ohmic contact to AlGaN/GaN HEMT with electrodes in contact with heterostructure interface Chen DB, Wan LJ, Li J, Liu ZK, Li GQ Solid-State Electronics, 151, 60, 2019 |
| 9 |
Electrodeposited p-type Cu2O thin films at high pH for all-oxide solar cells with improved performance Yang YY, Pritzker M, Li YN Thin Solid Films, 676, 42, 2019 |
| 10 |
High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors Charles M, Baines Y, Bavard A, Bouveyron R Journal of Crystal Growth, 483, 89, 2018 |