검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Radiation-induced segregation in a ceramic Wang X, Zhang HL, Baba T, Jiang H, Liu C, Guan YX, Elleuch O, Kuech T, Morgan D, Idrobo JC, Voyles PM, Szlufarska I Nature Materials, 19(9), 992, 2020 |
| 2 |
Highly tin doped GaAs at low growth temperatures using tetraethyl tin by metal organic vapor phase epitaxy Elleuch O, Lekhal K, Guan YX, Kuech TF Journal of Crystal Growth, 507, 255, 2019 |
| 3 |
N-H related defect playing the role of acceptor in GaAsN grown by chemical beam epitaxy Elleuch O, Wang L, Lee KH, Ikeda K, Kojima N, Ohshita Y, Yamaguchi M Journal of Crystal Growth, 468, 581, 2017 |
| 4 |
Inhomogeneous nitrogen incorporation effects on the transport properties of GaAsN grown by CBE Wang L, Elleuch O, Shirahata Y, Kojima N, Ohshita Y, Yamaguchi M Journal of Crystal Growth, 437, 6, 2016 |
| 5 |
Double acceptor in p-type GaAsN grown by chemical beam epitaxy Elleuch O, Wang L, Lee KH, Ikeda K, Kojima N, Ohshita Y, Yamaguchi M Journal of Crystal Growth, 432, 45, 2015 |