검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Influence of an in situ-deposited SiNx intermediate layer inside GaN and AlGaN layers on SiC substrates Engl K, Beer M, Gmeinwieser N, Schwarz UT, Zweck J, Wegscheider W, Miller S, Miler A, Lugauer HJ, Bruderl G, Lell A, Harle V Journal of Crystal Growth, 289(1), 6, 2006 |
| 2 |
Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers Able A, Wegscheider W, Engl K, Zweck J Journal of Crystal Growth, 276(3-4), 415, 2005 |