검색결과 : 8건
| No. | Article |
|---|---|
| 1 |
AIN homoepitaxial growth on sublimation-AIN substrate by low-pressure HVPE Nomura T, Okumura K, Miyake H, Hiramatsu K, Eryu O, Yamada Y Journal of Crystal Growth, 350(1), 69, 2012 |
| 2 |
n-type doping characteristics of O-implanted AlGaN Nakano Y, Fujishima O, Kachi T, Abe K, Eryu O, Nakashima K, Jimbo T Journal of the Electrochemical Society, 151(12), G801, 2004 |
| 3 |
Direct observation of the solid-phase recrystallization of self-implanted amorphous SiC layer on (11(2)over-bar0), (1(1)over-bar00), and (0001) oriented 6H-SiC Eryu O, Matsuo D, Abe K, Nakashima K Materials Science Forum, 389-3, 843, 2002 |
| 4 |
Effects of surface treatments of 6H-SiC upon metal-SiC interfaces Abe K, Sumitomo M, Sumi T, Eryu O, Nakashima K Materials Science Forum, 389-3, 909, 2002 |
| 5 |
A new type of SiC gas sensor with a pn-junction structure Nakashima K, Okuyama Y, Ando S, Eryu O, Abe K, Yokoi H, Oshima T Materials Science Forum, 389-3, 1427, 2002 |
| 6 |
Annealing of a vacancy-type defect and diffusion of implanted boron in 6H-SiC Ohshima T, Uedono A, Eryu O, Lee KK, Abe K, Itoh H, Nakashima K Materials Science Forum, 433-4, 633, 2002 |
| 7 |
Excimer laser annealing of ion-implanted 6H-silicon carbide Hishida Y, Watanabe M, Nakashima K, Eryu O Materials Science Forum, 338-3, 873, 2000 |
| 8 |
Improved ohmic contacts to 6H-SiC by pulsed laser processing Nakashima K, Eryu O, Ukai S, Yoshida K, Watanabe M Materials Science Forum, 338-3, 1005, 2000 |