화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl-2 + Ar inductively coupled plasma with various HBr/Cl-2 mixing ratios
Kim C, Efremov A, Lee J, Han IK, Kim YH, Kwon KH
Thin Solid Films, 660, 590, 2018
2 In situ mesa etching and immediate regrowth in a HVPE reactor for buried heterostructure device fabrication
Messmer ER, Lindstrom T, Lourdudoss S
Journal of Crystal Growth, 210(4), 600, 2000
3 Silicon Surfaces Treated by CF4, CF4/H-2, and CF4/O-2 RF Plasmas - Study by in-Situ Fourier-Transform Infrared Ellipsometry
Shirafuji T, Stoffels WW, Moriguchi H, Tachibana K
Journal of Vacuum Science & Technology A, 15(2), 209, 1997
4 Ion-Assisted Si/Xef2-Etching - Influence of Ion/Neutral Flux Ratio and Ion Energy
Vugts MJ, Hermans LJ, Beijerinck HC
Journal of Vacuum Science & Technology A, 14(4), 2138, 1996