검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Test methods for measuring bulk copper and nickel in heavily doped p-type silicon wafers Fabry L, Hoelzl R, Andrukhiv A, Matsumoto K, Qiu J, Koveshnikov S, Goldstein M, Grabau A, Horie H, Takeda R Journal of the Electrochemical Society, 153(6), G566, 2006 |
| 2 |
Gettering of copper and nickel in p/p(+) epitaxial wafers Hoelzl R, Huber D, Range KJ, Fabry L, Hage J, Wahlich R Journal of the Electrochemical Society, 147(7), 2704, 2000 |
| 3 |
Calibrated contamination spiking method for silicon wafers in the 10(10)-10(12) atom/cm(2) range Holzl R, Range KJ, Fabry L, Huber D Journal of the Electrochemical Society, 146(6), 2245, 1999 |
| 4 |
Measurement of Shallow Arsenic Impurity Profiles in Semiconductor Silicon Using Time-of-Flight Secondary-Ion Mass-Spectrometry and Total-Reflection X-Ray-Fluorescence Spectrometry Schwenke H, Knoth J, Fabry L, Pahlke S, Scholz R, Frey L Journal of the Electrochemical Society, 144(11), 3979, 1997 |