| 1 |
Fermi golden rule approach to evaluating outer-sphere electron-transfer rate constants at semiconductor/liquid interfaces (vol 101, pg 11152, 1997)
Royea WJ, Fajardo AM, Lewis NS
Journal of Physical Chemistry B, 102(18), 3653, 1998 |
| 2 |
Free-energy dependence of electron-transfer rate constants at Si/liquid interfaces
Fajardo AM, Lewis NS
Journal of Physical Chemistry B, 101(51), 11136, 1997 |
| 3 |
Fermi golden rule approach to evaluating outer-sphere electron-transfer rate constants at semiconductor/liquid interfaces
Royea WJ, Fajardo AM, Lewis NS
Journal of Physical Chemistry B, 101(51), 11152, 1997 |
| 4 |
Theoretical and Experimental Upper-Bounds on Interfacial Charge-Transfer Rate Constants Between Semiconducting Solids and Outer-Sphere Redox Couples
Pomykal KE, Fajardo AM, Lewis NS
Journal of Physical Chemistry, 100(9), 3652, 1996 |
| 5 |
Rate Constants for Charge-Transfer Across Semiconductor-Liquid Interfaces
Fajardo AM, Lewis NS
Science, 274(5289), 969, 1996 |
| 6 |
Stability of N-Si/CH3OH Contacts as a Function of the Reorganization Energy of the Electron-Donor
Pomykal KE, Fajardo AM, Lewis NS
Journal of Physical Chemistry, 99(20), 8302, 1995 |
