검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Defect creation in In GaAs/GaAs multiple quantum wells-I. Structural properties Karow MM, Faleev NN, Smith DJ, Honsberg CB Journal of Crystal Growth, 425, 43, 2015 |
| 2 |
Defect Creation in InGaAs/GaAs Multiple Quantum Wells - II. Optical Properties Karow MM, Faleev NN, Maros A, Honsberg CB Journal of Crystal Growth, 425, 49, 2015 |
| 3 |
High growth speed of gallium nitride using ENABLE-MBE Williams JJ, Fischer AM, Williamson TL, Gangam S, Faleev NN, Hoffbauer MA, Honsberg CB Journal of Crystal Growth, 425, 129, 2015 |
| 4 |
Luminescence of GaN/GaAs(111)B grown by molecular beam epitaxy with hydrazine Nikishin SA, Antipov VG, Guriev AI, Elyukhin VA, Faleev NN, Kudriavtsev YA, Lebedev AB, Shubina TV, Zubrilov AS, Temkin H Journal of Vacuum Science & Technology B, 16(3), 1289, 1998 |
| 5 |
Single phase ZnSnAs2 grown by molecular beam epitaxy Seryogin GA, Nikishin SA, Temkin H, Schlaf R, Sharp LI, Wen YC, Parkinson B, Elyukhin VA, Kudriavtsev YA, Mintairov AM, Faleev NN, Baidakova MV Journal of Vacuum Science & Technology B, 16(3), 1456, 1998 |
| 6 |
Characterization of Molecular-Beam Epitaxy-Grown Cdf2 Layers by X-Ray-Diffraction and CaF2-Sm Photoluminescence Probe Sokolov NS, Faleev NN, Gastev SV, Yakovlev NL, Izumi A, Tsutsui K Journal of Vacuum Science & Technology A, 13(6), 2703, 1995 |