검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
SiGe quantum cascade structures for light emitting devices Zhang J, Li XB, Neave JH, Norris DJ, Cullis AG, Kelsall RW, Lynch S, Towsend P, Paul DJ, Fewster PF Journal of Crystal Growth, 278(1-4), 488, 2005 |
| 2 |
GSMBE growth and structural characterisation of SiGeC layers for HBT Zhang J, Neave JH, Li XB, Fewster PF, El Mubarek HAW, Ashburn P, Mitrovic IZ, Buiu O, Hall S Journal of Crystal Growth, 278(1-4), 505, 2005 |
| 3 |
X-ray studies of As-doped GaN grown by plasma-assisted molecular beam epitaxy Li T, Staddon CR, Novikov SV, Fewster PF, Widdowson A, Andrew NL, Kidd P, Harrison I, Winser A, Liao Y, Foxon CT Journal of Crystal Growth, 235(1-4), 103, 2002 |
| 4 |
Microstructure and composition analysis of group III nitrides by X-ray scattering Fewster PF, Andrew NL, Foxon CT Journal of Crystal Growth, 230(3-4), 398, 2001 |
| 5 |
X-ray studies of group III-nitride quantum wells with high quality interfaces Fewster PF, Andrew NL, Hughes OH, Staddon C, Foxon CT, Bell A, Cheng TS, Wang T, Sakai S, Jacobs K, Moerman I Journal of Vacuum Science & Technology B, 18(4), 2300, 2000 |
| 6 |
Strain analysis by X-ray diffraction Fewster PF, Andrew NL Thin Solid Films, 319(1-2), 1, 1998 |