검색결과 : 17건
| No. | Article |
|---|---|
| 1 |
Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy Patra SK, Tran N, Vines L, Kolevatov I, Monakhov E, Fimland BO Journal of Crystal Growth, 463, 116, 2017 |
| 2 |
Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy Liudi Mulyo A, Konno Y, Nilsen JS, van Helvoort ATJ, Fimland BO, Weman H, Kishino K Journal of Crystal Growth, 480, 67, 2017 |
| 3 |
Crystal phase engineering in self-catalyzed GaAs and GaAs/GaAsSb nanowires grown on Si(111) Munshi AM, Dheeraj DL, Todorovic J, van Helvoort ATJ, Weman H, Fimland BO Journal of Crystal Growth, 372, 163, 2013 |
| 4 |
Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy Dheeraj DL, Munshi AM, Christoffersen OM, Kim DC, Signorello G, Riel H, van Helvoort ATJ, Weman H, Fimland BO Journal of Crystal Growth, 378, 532, 2013 |
| 5 |
Temperature dependent lattice constant of InSb above room temperature Breivik M, Nilsen TA, Fimland BO Journal of Crystal Growth, 381, 165, 2013 |
| 6 |
InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation Thomassen SF, Reenaas TW, Fimland BO Journal of Crystal Growth, 323(1), 223, 2011 |
| 7 |
Thermal dependence of the lattice constant and the Poisson ratio of AlSb above room temperature Nilsen TA, Patra SK, Breivik M, Fimland BO Journal of Crystal Growth, 336(1), 29, 2011 |
| 8 |
Critical thickness of MBE-grown Ga1-xInxSb (x < 0.2) on GaSb Nilsen TA, Breivik M, Selvig E, Fimland BO Journal of Crystal Growth, 311(7), 1688, 2009 |
| 9 |
Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires Dheeraj DL, Patriarche G, Zhou H, Harmand JC, Weman H, Fimland BO Journal of Crystal Growth, 311(7), 1847, 2009 |
| 10 |
Metallic nanostructures on Co/GaAs(001)(4x2) surfaces Ludge K, Vogt P, Richter W, Fimland BO, Braun W, Esser N Journal of Vacuum Science & Technology B, 22(4), 2008, 2004 |