| 1 |
Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2
Palade C, Lepadatu AM, Slav A, Lazanu S, Teodorescu VS, Stoica T, Ciurea ML
Applied Surface Science, 428, 698, 2018 |
| 2 |
Improvement of cell reliability by floating gate implantation on 1Xnm NAND flash memory
Liao JH, Ko ZJ, Lin YM, Lin HJ, Hsieh JY, Yang LW, Yang T, Chen KC, Lu CY
Solid-State Electronics, 146, 39, 2018 |
| 3 |
Cycle of charge carrier states with formation and extinction of a floating gate in an ambipolar tetracyanoquaterthienoquinoid-based field-effect transistor
Itoh T, Toyota T, Higuchi H, Matsushita MM, Suzuki K, Sugawara T
Chemical Physics Letters, 671, 71, 2017 |
| 4 |
Endurance degradation and lifetime model of p-channel floating gate flash memory device with 2T structure
Wei JX, Liu SY, Liu XQ, Sun WF, Liu YW, Liu XH, Hou B
Solid-State Electronics, 134, 58, 2017 |
| 5 |
Effects of blocking oxide layer types on the performance of nonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite thin films
Chiang KC, Hsieh TE
Thin Solid Films, 621, 63, 2017 |
| 6 |
Multilevel memory characteristics by light-assisted programming in floating-gate organic thin-film transistor nonvolatile memory
Ying J, Han JH, Xiang LY, Wang W, Xie WF
Current Applied Physics, 15(7), 770, 2015 |
| 7 |
Normally-off dual gate AlGaN/GaN MISFET with selective area-recessed floating gate
Ahn HK, Kim ZS, Bae SB, Kim HC, Kang DM, Kim SI, Lee JM, Min BG, Yoon HS, Lim JW, Kwon YH, Nam ES, Park HM, Kim HS, Lee JH
Solid-State Electronics, 95, 42, 2014 |
| 8 |
A novel method for measuring parasitic resistance in high electron mobility transistors
Yang Z, Wang JY, Li XP, Zhang B, Zhao J, Xu Z, Wang MJ, Yu M, Yang ZC, Wu WG, Zhang YM, Zhang JC, Ma XH, Hao Y
Solid-State Electronics, 100, 27, 2014 |
| 9 |
Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate
Qiu XY, Zhou GD, Li J, Chen Y, Wang XH, Dai JY
Thin Solid Films, 562, 674, 2014 |
| 10 |
Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si
Aluguri R, Das S, Singha RK, Ray SK
Current Applied Physics, 13(1), 12, 2013 |
