화학공학소재연구정보센터
검색결과 : 39건
No. Article
1 epsilon-Ga2O3 epilayers as a material for solar-blind UV photodetectors
Pavesi M, Fabbri F, Boschi F, Piacentini G, Baraldi A, Bosi M, Gombia E, Parisini A, Fornari R
Materials Chemistry and Physics, 205, 502, 2018
2 Sol-gel growth and characterization of In2O3 thin films
Palomares-Sanchez SA, Watts BE, Klimm D, Baraldi A, Parisini A, Vantaggio S, Fornari R
Thin Solid Films, 645, 383, 2018
3 Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts
Cavallari N, Pattini F, Rampino S, Annoni F, Barozzi M, Bronzoni M, Gilioli E, Gombia E, Maragliano C, Mazzer M, Pepponi G, Spaggiari G, Fornari R
Applied Surface Science, 412, 52, 2017
4 Crystal Structure and Ferroelectric Properties of epsilon-Ga2O3 Films Grown on (0001)-Sapphire
Mezzadri F, Calestani G, Boschi F, Delmonte D, Bosi M, Fornari R
Inorganic Chemistry, 55(22), 12079, 2016
5 Hetero-epitaxy of epsilon-Ga2O3 layers by MOCVD and ALD
Boschi F, Bosi M, Berzina T, Buffagni E, Ferrari C, Fornari R
Journal of Crystal Growth, 443, 25, 2016
6 A novel crystal growth technique from the melt: Levitation-Assisted Self-Seeding Crystal Growth Method
Galazka Z, Uecker R, Fornari R
Journal of Crystal Growth, 388, 61, 2014
7 Structural properties of Si-doped beta-Ga2O3 layers grown by MOVPE
Gogova D, Wagner G, Baldini M, Schmidbauer M, Irmscher K, Schewski R, Galazka Z, Albrecht M, Fornari R
Journal of Crystal Growth, 401, 665, 2014
8 Melt growth, characterization and properties of bulk In2O3 single crystals
Galazka Z, Uecker R, Irmscher K, Schulz D, Klimm D, Albrecht M, Pietsch M, Ganschow S, Kwasniewski A, Fornari R
Journal of Crystal Growth, 362, 349, 2013
9 Crystallization of 640 kg mc-silicon ingots under traveling magnetic field by using a heater-magnet module
Kudla C, Blumenau AT, Bullesfeld F, Dropka N, Frank-Rotsch C, Kiessling F, Klein O, Lange P, Miller W, Rehse U, Sahr U, Schellhorn M, Weidemann G, Ziem M, Bethin G, Fornari R, Muller M, Sprekels J, Trautmann V, Rudolph P
Journal of Crystal Growth, 365, 54, 2013
10 SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen
Hartmann C, Albrecht M, Wollweber J, Schuppang J, Juda U, Guguschev C, Golka S, Dittmar A, Fornari R
Journal of Crystal Growth, 344(1), 19, 2012