검색결과 : 12건
| No. | Article |
|---|---|
| 1 |
Photonic amorphous silicon device technology Fortmann CM, Mawyin J, Tonucci RJ, Mahan AH Thin Solid Films, 501(1-2), 350, 2006 |
| 2 |
Hot-wire photonics: materials, science, and technology Fortmann CM, Mahan AH, Ward S, Anderson WA, Tonucci R, Hata N Thin Solid Films, 430(1-2), 278, 2003 |
| 3 |
Properties of amorphous silicon solar cells fabricated from SiH2Cl2 Shimizu S, Komaru T, Okawa K, Azuma M, Kamiya T, Fortmann CM, Shimizu I Solar Energy Materials and Solar Cells, 66(1-4), 289, 2001 |
| 4 |
Stability of a-Si : H solar cells deposited by Ar-treatment or by ECR techniques Ohkawa K, Shimizu S, Sato H, Komaru T, Futako W, Kamiya T, Fortmann CM, Shimizu I Solar Energy Materials and Solar Cells, 66(1-4), 297, 2001 |
| 5 |
Microstructure control of very thin polycrystalline silicon layers on glass substrate by plasma enhanced CVD Matsuura D, Kamiya T, Fortmann CM, Simizu I Solar Energy Materials and Solar Cells, 66(1-4), 305, 2001 |
| 6 |
In situ hydrogen plasma treatment for improved transport of (400) oriented polycrystalline silicon films Suemasu A, Nakahata K, Ro K, Kamiya T, Fortmann CM, Shimizu I Solar Energy Materials and Solar Cells, 66(1-4), 313, 2001 |
| 7 |
High-quality narrow gap (similar to 1.52 eV) a-Si : H with improved stability fabricated by excited inert gas treatment Sato H, Fukutani K, Futako W, Kamiya T, Fortmann CM, Shimizu I Solar Energy Materials and Solar Cells, 66(1-4), 321, 2001 |
| 8 |
Improved p-i-n solar cells structure for narrow bandgap a-Si : H prepared by Ar* chemical annealing at high temperatures Komaru T, Sato H, Futako W, Kamiya T, Fortmann CM, Shimizu I Solar Energy Materials and Solar Cells, 66(1-4), 329, 2001 |
| 9 |
Hot-wire deposition of photonic-grade amorphous silicon Fortmann CM, Jaen EL, Hata N, Anderson WA, Mahan AH Thin Solid Films, 395(1-2), 142, 2001 |
| 10 |
Control of orientation from random to (220) or (400) in polycrystalline silicon films Kamiya T, Nakahata K, Miida A, Fortmann CM, Shimizu I Thin Solid Films, 337(1-2), 18, 1999 |