화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Effect of residual hydrogen and temperature on initial growth stages and properties of GaAs1-xNx
Fotkatzikis A, Freundlich A
Journal of Crystal Growth, 301, 560, 2007
2 III-V dilute nitride-based multi-quantum well solar cell
Freundlich A, Fotkatzikis A, Bhusal L, Williams L, Alemu A, Zhu W, Coaquira JAH, Feltrin A, Radhakrishnan G
Journal of Crystal Growth, 301, 993, 2007
3 Chemical beam epitaxy of GaAsN/GaAs multiquantum well solar cell
Freundlich A, Fotkatzikis A, Bhusal L, Williams L, Alemu A, Zhu W, Coaquira JAH, Feltrin A, Radhakrishnan G
Journal of Vacuum Science & Technology B, 25(3), 987, 2007
4 Hydrogen limited nitrogen incorporation in III-V dilute nitrides grown by rf nitrogen plasma assisted chemical beam epitaxy
Fotkatzikis A, Freundlich A
Journal of Vacuum Science & Technology B, 24(3), 1536, 2006
5 Formation of atomic hydrogen during radio frequency nitrogen plasma assisted chemical beam epitaxy of III-V dilute nitrides
Fotkatzikis A, Pinault MA, Coaquira JAH, Freundlich A
Journal of Vacuum Science & Technology B, 23(3), 1333, 2005