검색결과 : 12건
No. | Article |
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1 |
Improved modeling of photoluminescent and electroluminescent coupling in multijunction solar cells Lan DC, Geisz JE, Steiner MA, Garcia I, Friedman DJ, Green MA Solar Energy Materials and Solar Cells, 143, 48, 2015 |
2 |
PARASITOLOGY Molecular one-upmanship Raper J, Friedman DJ Nature, 501(7467), 322, 2013 |
3 |
Removal of stacking faults in Ge grown on Si through nanoscale openings in chemical SiO2 Leonhardt D, Sheng J, Cederberg JG, Carroll MS, Li QM, Romero MJ, Kuciauskas D, Friedman DJ, Han SM Thin Solid Films, 519(22), 7664, 2011 |
4 |
Association of Trypanolytic ApoL1 Variants with Kidney Disease in African Americans Genovese G, Friedman DJ, Ross MD, Lecordier L, Uzureau P, Freedman BI, Bowden DW, Langefeld CD, Oleksyk TK, Knob ALU, Bernhardy AJ, Hicks PJ, Nelson GW, Vanhollebeke B, Winkler CA, Kopp JB, Pays E, Pollak MR Science, 329(5993), 841, 2010 |
5 |
Effects of temperature, nitrogen ions, and antimony on wide depletion width GaInNAs Ptak AJ, Friedman DJ, Kurtz S Journal of Vacuum Science & Technology B, 25(3), 955, 2007 |
6 |
Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy Ptak AJ, Friedman DJ, Kurtz S, Reedy RC, Young M, Jackrel DB, Yuen HB, Bank SR, Wistey MA, Harris JS Journal of Vacuum Science & Technology B, 24(3), 1540, 2006 |
7 |
A comparison of MBE- and MOCVD-grown GaInNAs Ptak AJ, Johnston SW, Kurtz S, Friedman DJ, Metzger WK Journal of Crystal Growth, 251(1-4), 392, 2003 |
8 |
Incorporation of nitrogen into GaAsN grown by MOCVD using different precursors Kurtz S, Reedy R, Barber GD, Geisz JF, Friedman DJ, McMahon WE, Olson JM Journal of Crystal Growth, 234(2-3), 318, 2002 |
9 |
Evaluation of NF3 versus dimethylhydrazine as N sources for GaAsN Kurtz S, Reedy R, Keyes B, Barber GD, Geisz JF, Friedman DJ, McMahon WE, Olson JM Journal of Crystal Growth, 234(2-3), 323, 2002 |
10 |
Epitaxial growth of BGaAs and BGaInAs by MOCVD Geisz JF, Friedman DJ, Kurtz S, Olson JM, Swartzlander AB, Reedy RC, Norman AG Journal of Crystal Growth, 225(2-4), 372, 2001 |