화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Single crystalline bulk growth of In0.3Ga0.7As on GaAs seed using the multi-component zone melting method
Kodama S, Furumura Y, Kinoshita K, Kato H, Yoda S
Journal of Crystal Growth, 208(1-4), 165, 2000
2 Decomposition Property of Methylhydrazine with Titanium Nitridation at Low-Temperature
Ohba T, Suzuki T, Yagi H, Furumura Y, Hatano T
Journal of the Electrochemical Society, 142(3), 934, 1995
3 Spontaneous Polysilicon and Epitaxial Silicon Deposition
Mieno F, Tukune A, Miyata H, Shimizu A, Furumura Y
Journal of the Electrochemical Society, 142(5), 1590, 1995
4 Thermally Deposited Amorphous-Silicon
Mieno F, Sukegawa TS, Iizuka J, Miyata H, Nomura H, Tsukune A, Furumura Y
Journal of the Electrochemical Society, 141(8), 2166, 1994