화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 In situ electron spin resonance observation of Si(111) 7 x 7 surface during hydrogenation process
Futako W, Nishizawa M, Yasuda T, Isoya J, Yamasaki S
Journal of Vacuum Science & Technology B, 19(5), 1898, 2001
2 Stability of a-Si : H solar cells deposited by Ar-treatment or by ECR techniques
Ohkawa K, Shimizu S, Sato H, Komaru T, Futako W, Kamiya T, Fortmann CM, Shimizu I
Solar Energy Materials and Solar Cells, 66(1-4), 297, 2001
3 High-quality narrow gap (similar to 1.52 eV) a-Si : H with improved stability fabricated by excited inert gas treatment
Sato H, Fukutani K, Futako W, Kamiya T, Fortmann CM, Shimizu I
Solar Energy Materials and Solar Cells, 66(1-4), 321, 2001
4 Improved p-i-n solar cells structure for narrow bandgap a-Si : H prepared by Ar* chemical annealing at high temperatures
Komaru T, Sato H, Futako W, Kamiya T, Fortmann CM, Shimizu I
Solar Energy Materials and Solar Cells, 66(1-4), 329, 2001
5 Particle formation and a-Si : H film deposition in narrow-gap RF plasma CVD
Maemura Y, Fujiyama H, Takagi T, Hayashi R, Futako W, Kondo M, Matsuda A
Thin Solid Films, 345(1), 80, 1999