화학공학소재연구정보센터
검색결과 : 11건
No. Article
1 Reflectance difference spectroscopy: a powerful tool for in situ investigations of II-VI compounds with Mn
Bonanni A, Hingerl K, Sitter H, Stifter D
Thin Solid Films, 367(1-2), 216, 2000
2 In situ optical second harmonic rotational anisotropy measurements of an Au(111) electrode during electrochemical deposition of tellurium
Yagi I, Nakabayashi S, Uosaki K
Journal of Physical Chemistry B, 102(15), 2677, 1998
3 Process Modeling in Metal-Organic Vapor-Phase Epitaxy
Dauelsberg M, Durst F, Kadinski L, Makarov YN
Chemie Ingenieur Technik, 69(7), 923, 1997
4 Electron-Transfer Rate Constants for Majority Electrons at GaAs and Gainp2 Semiconductor-Liquid Interfaces
Meier A, Kocha SS, Hanna MC, Nozik AJ, Siemoneit K, Reinekekoch R, Memming R
Journal of Physical Chemistry B, 101(36), 7038, 1997
5 Electrochemical-Behavior of (100)GaAs in Copper(II)-Containing Solutions
Vereecken PM, Kerchove FV, Gomes WP
Electrochimica Acta, 41(1), 95, 1996
6 Thermodynamic Analysis of GaAs1-xPx Vapor-Phase Epitaxy
Gopalakrishnan N, Dhanasekaran R
Journal of the Electrochemical Society, 143(8), 2631, 1996
7 Different Growth Modes in GaAs(110) Homoepitaxy
Holmes DM, Belk JG, Sudijono JL, Neave JH, Jones TS, Joyce BA
Journal of Vacuum Science & Technology A, 14(3), 849, 1996
8 Hydrazide Derivatives of Gallium
Neumayer DA, Cowley AH, Decken A, Jones RA, Lakhotia V, Ekerdt JG
Inorganic Chemistry, 34(18), 4698, 1995
9 Electrochemical Formation of Se Atomic Layers on Au(100)
Lister TE, Huang BM, Herrick RD, Stickney JL
Journal of Vacuum Science & Technology B, 13(3), 1268, 1995
10 Effects of Interface Flatness and Abruptness on Optical and Electrical Characteristics of GaAs/AlGaAs Quantum Structures Grown by Metalorganic Vapor-Phase Epitaxy
Shinohara M, Yokoyama H, Inoue N
Journal of Vacuum Science & Technology B, 13(4), 1773, 1995