화학공학소재연구정보센터
검색결과 : 23건
No. Article
1 Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering
Yuan XM, Caroff P, Wong-Leung J, Fu L, Tan HH, Jagadish C
Advanced Materials, 27(40), 6096, 2015
2 Growth mode transitions in molecular-beam epitaxy of GaAs(001)
Trofimov VI, Park HS
Thin Solid Films, 428(1-2), 170, 2003
3 Narrow photoluminescence linewidths from ensembles of self-assembled InGaAs quantum dots
Mirin RP, Silverman KL, Christensen DH, Roshko A
Journal of Vacuum Science & Technology B, 18(3), 1510, 2000
4 Damage to III-V devices during electron cyclotron resonance chemical vapor deposition
Lee JW, Mackenzie KD, Johnson D, Hahn YB, Hays DC, Abernathy CR, Ren F, Pearton SJ
Journal of Vacuum Science & Technology A, 17(4), 2183, 1999
5 Compatibility relationship among reaction equilibria, equivalence principle of reaction approaches, and silicon contamination in semiconductors
Yang R
Journal of Physical Chemistry B, 102(20), 3986, 1998
6 Direct observation of anodic films formed on gallium phosphide in aqueous tungstate electrolyte
Echeverria F, Skeldon P, Thompson GE, Wood GC, Habazaki H, Shimizu K
Journal of the Electrochemical Society, 145(9), 3011, 1998
7 Intersubband absorption and photoluminescence in Si-doped self-organized InAs/Ga(Al)As quantum dots
Phillips J, Kamath K, Zhou X, Chervela N, Bhattacharya P
Journal of Vacuum Science & Technology B, 16(3), 1343, 1998
8 Iodine and carbon tetrabromide use in solid source molecular beam epitaxy
Miller DL, Micovic M, Lubyshev DI, Cai WZ, Hwang WY, Zhang K
Journal of Vacuum Science & Technology B, 16(3), 1361, 1998
9 In situ determination of in-plane strain anisotropy in ZnSe(001)/GaAs layers using reflectance difference spectroscopy
Hingerl K, Yasuda T, Hanada T, Miwa S, Kimura K, Ohtake A, Yao T
Journal of Vacuum Science & Technology B, 16(4), 2342, 1998
10 Role of Te on the morphology of InAs self-assembled islands
Safar GAM, Rodrigues WN, Moreira MVB, de Oliveira AG, Neves BRA, Vilela JM, Andrade MS, Rochet F
Journal of Vacuum Science & Technology B, 16(5), 2633, 1998